Product introduction：
Product Introduction
**UT3N01ZL-AE3-R-VB** is a **single N-channel MOSFET** in a **SOT23-3 package**, designed for low-power, high-efficiency switching applications. This MOSFET has a **maximum drain-source voltage (VDS) of 60V**, suitable for medium voltage applications. Its **threshold voltage (Vth)** is **1.7V**, which can enable switching at a lower gate voltage, and due to the use of **Trench technology**, it has a lower **on-resistance (RDS(ON))**, ensuring efficient conduction performance. Although the maximum drain current of this MOSFET is **0.3A**, its design can still meet the high efficiency requirements in low-power, low-current applications. This device is suitable for **small switching power supplies**, **load switches** and other applications requiring low current and small packages.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
60V |
20（±V） |
1.7V |
0.3A |
|
|
2800mΩ |
|
Detailed parameter description
- **Model**: UT3N01ZL-AE3-R-VB
- **Package**: SOT23-3
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ@VGS=4.5V
- 2800mΩ@VGS=10V
- **Maximum drain current (ID)**: 0.3A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C (typical)
Domain and module applications：
Application fields and module examples
1. **Small power management system**
- UT3N01ZL-AE3-R-VB is very useful in **small power management systems**, especially for **low-power power supplies** and **portable electronic devices**. Its maximum drain voltage is **60V**, making it suitable for some low-voltage switching power supply applications, such as **chargers**, **battery management systems (BMS)** and **USB power supplies**. It can efficiently convert voltages and ensure the stability of power management systems.
2. **Load switch**
- Due to its small **SOT23-3 package**, UT3N01ZL-AE3-R-VB is very suitable for **load switch** applications, especially in **low-power devices**. In these applications, MOSFETs are used as switching elements to control the flow of current, such as for controlling **low-power LED lights**, **battery-driven devices** and other circuits that require efficient switching.
3. **Low-power switching circuits**
- UT3N01ZL-AE3-R-VB is suitable for **low-power switching circuits**, such as **small home appliances** and **low-power electronic devices**. Its **low threshold voltage (Vth)** and **low on-resistance (RDS(ON))** ensure efficient operation at low gate voltage, suitable for fast response and low-power operation in these circuits.
4. **Mobile devices**
- In **mobile devices** (such as smartphones, wearable devices, etc.), UT3N01ZL-AE3-R-VB's **small package** and **low current carrying capacity** make it an ideal choice. Its low **RDS(ON)** ensures efficient switching function in a limited space, suitable for power management, load control and other aspects in these devices.
5. **Sensor circuit**
- Due to its low operating current (maximum drain current is **0.3A**), UT3N01ZL-AE3-R-VB is also suitable for **sensor circuit**, especially in sensor modules that need to accurately control current and maintain low power consumption. For example, it can be used in **temperature and humidity sensors**, **gas sensors** and other low-power sensor devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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