Product introduction：
Product Introduction
**UT3N01ZG-AE3-R-VB** is a single N-channel MOSFET in a SOT23-3 package, designed for low power and miniaturized applications. With a maximum drain-source voltage (V_DS) of 60V and a maximum drain current of 0.3A, this MOSFET is suitable for circuits requiring high performance and compact packaging. UT3N01ZG-AE3-R-VB uses Trench technology to provide lower on-resistance and higher switching efficiency. Although its current capacity is relatively low, its high conductivity and low on-resistance enable it to excel in low current, high voltage applications, and is widely used in portable devices, power management, and signal processing.
File download
Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
60V |
20（±V） |
1.7V |
0.3A |
|
|
2800mΩ |
|
Detailed parameter description
- **Model**: UT3N01ZG-AE3-R-VB
- **Package type**: SOT23-3
- **Configuration**: Single N-channel
- **V_DS (drain-source voltage)**: 60V
- **V_GS (gate-source voltage)**: ±20V
- **V_threshold voltage)**: 1.7V
- **R_DS(ON) (on-resistance)**:
- 2800mΩ (V_GS = 10V)
- 3100mΩ (V_GS = 4.5V)
- **I_D (drain current)**: 0.3A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
1. **Portable consumer electronics**
As the UT3N01ZG-AE3-R-VB uses a compact SOT23-3 package, it is ideal for portable devices that need to save space. It can be used as a switching element to control battery management, power switching, and low-power modes in mobile phones, tablets, watches, headphones, etc.
2. **Low-power power management**
The low on-resistance and moderate current handling capability of this MOSFET make it an ideal choice for low-power power management circuits. For example, in low-power DC-DC converters and power conditioning modules, the UT3N01ZG-AE3-R-VB can be used as an efficient switching element to provide a stable current flow and minimize energy losses.
3. **Battery management system**
In battery-powered devices, the UT3N01ZG-AE3-R-VB can be used for battery charge and discharge management. Especially in low-current battery management systems that require efficient and precise current control, this MOSFET can provide reliable switching functions to protect the battery from overcharging and over-discharging.
4. **Signal Conditioning and Switching**
The low current capacity of UT3N01ZG-AE3-R-VB makes it very suitable for signal conditioning and switching applications. It can be used in wireless communication devices, sensor modules, and audio devices as a signal switch to achieve signal routing and control.
5. **LED Drive and Display System**
In LED driver and display control systems, UT3N01ZG-AE3-R-VB can be used as a low-power switching element to control the switching and brightness adjustment of LED lights. It can operate at lower currents to ensure high efficiency and stability, and is particularly suitable for small displays, backlight systems, and lighting applications.
6. **Smart Home and IoT Devices**
The low power consumption characteristics of UT3N01ZG-AE3-R-VB make it very useful in smart home devices and Internet of Things (IoT) applications. It can be used in sensor controls, battery-powered monitoring equipment, smart switches and small electric actuators. Through its efficient current switching and small package, it can ensure long-term stable operation while reducing energy consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
