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UT3N01ZG-AE2-R-VB Product details

Product introduction:

1. Product Introduction

**UT3N01ZG-AE2-R-VB** is a single N-Channel MOSFET in SOT23-3 package, designed for low power, high efficiency applications. The maximum drain-source voltage (VDS) of this model is 60V, and the maximum drain current (ID) is 0.3A, which is suitable for low current, low power switching applications. Its on-resistance (RDS(ON)) is 2800mΩ at VGS=10V, with low switching loss and high switching efficiency. The threshold voltage (Vth) of this MOSFET is 1.7V, which can be turned on quickly at a low gate voltage, suitable for low power circuits requiring low voltage operation. Using Trench technology, it can provide low on-resistance and high switching performance, suitable for a variety of low power applications and compact electronic devices.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-N 60V 20(±V) 1.7V 0.3A 2800mΩ
2. Detailed parameter description

| **Parameter** | **Value** | **Description** |
|-------------------|-------------------------------------|----------------------------------------------------|
| **Model** | UT3N01ZG-AE2-R-VB | MOSFET model|
| **Package** | SOT23-3 | SOT23-3 package, suitable for small circuit design with limited space|
| **Structure** | Single-N-Channel | Single N-type MOSFET structure|
| **VDS** | 60V | Maximum drain-source voltage|
| **VGS** | ±20V | Maximum gate-source voltage|
| **Vth** | 1.7V | Gate threshold voltage|
| **RDS(ON)** | 3100mΩ@VGS=4.5V | On-resistance at VGS=4.5V|
| **RDS(ON)** | 2800mΩ@VGS=10V | On-resistance at VGS=10V|
| **ID** | 0.3A | Maximum drain current|
| **Technology** | Trench | Trench technology provides low on-resistance and efficient switching performance|

Domain and module applications:

3. Application fields and module examples

**Low-power switching circuit: **
UT3N01ZG-AE2-R-VB is a MOSFET suitable for low-power switching circuits. Its small size (SOT23-3 package) and low on-resistance make it very suitable for small switching power supplies, low-power LED drivers, and low-power battery-driven applications. For example, in handheld devices or low-power wireless sensors, it can switch loads efficiently while maintaining low heat loss.

**Low-voltage control system: **
Since the gate threshold voltage of UT3N01ZG-AE2-R-VB is 1.7V, it can start and shut down quickly at low voltages and is suitable for low-voltage control systems. This feature makes this MOSFET very suitable for circuits that require low-voltage drive, such as low-voltage regulators and battery-powered applications.

**Power management module: **
In portable electronic devices, wireless communication equipment, and sensor systems, UT3N01ZG-AE2-R-VB can be used in power management modules. These modules usually require efficient switching characteristics and low power consumption to extend battery life and ensure stable system operation. For example, in low-power Bluetooth devices and sensors, UT3N01ZG-AE2-R-VB can ensure effective control of battery current and voltage.

**Load switch and battery protection:**
UT3N01ZG-AE2-R-VB can be used in load switch circuits, especially in low-power systems, where it can provide precise current control and fast switching. In addition, this MOSFET is also suitable for battery protection circuits, especially in small devices, where it can effectively control the battery charging and discharging process and protect the battery from overload and short circuit.

**Portable devices and consumer electronics:**
This MOSFET is ideal for power management in consumer electronics, such as mobile phones, smart wearable devices, and portable speakers. UT3N01ZG-AE2-R-VB can provide reliable current switching control in a limited space while ensuring battery life and high performance of the device.

**Embedded systems and microcontroller interfaces:**
In embedded systems and microcontroller interfaces, UT3N01ZG-AE2-R-VB can be used as a driver or signal conditioner for applications such as micro motor drive, battery management, and signal conditioning circuits. It can achieve switching operations at lower voltages and smaller currents, making it suitable for various compact circuit designs.

In summary, UT3N01ZG-AE2-R-VB is an ideal choice for its small package, low on-resistance, and high-efficiency switching characteristics, and is widely used in various low-power, compact electronic devices and systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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