Product introduction:
1. Product Introduction
**UT100N03-TA3-T-VB** is a **unipolar N-channel** power MOSFET in **TO220 package**, using **Trench technology**, with excellent conduction performance and switching characteristics. The maximum drain-source voltage (VDS) of this MOSFET is **30V**, which is suitable for low-voltage applications and widely used in occasions with high current density. **Vth (threshold voltage) is 1.7V**, which ensures the efficient switching performance of the device and can be smoothly turned on at a low gate-source voltage. The **RDS(ON)** of the device is **3mΩ** at **VGS=10V** and **4mΩ** at **VGS=4.5V**, showing extremely low on-resistance, reducing power loss and improving efficiency. Its maximum drain current **ID** is **120A**, which can work stably under high current load and is suitable for applications with high power density.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
30V |
|
1.7V |
120A |
|
|
3mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
2. Detailed parameter description
- **Package type**: TO220
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @VGS=10V
- 4mΩ @VGS=4.5V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench technology
- **Maximum power loss**: Calculated according to specific working conditions
- **Operating temperature range**: -55°C to +150°C
- **Thermal resistance (junction-to-case)**: Lower thermal resistance design, which helps heat dissipation
- **Input charge (Qg)**: Suitable for high frequency applications
- **Radiation resistance**: Suitable for harsher environments
Domain and module applications:
3. Applicable fields and modules
# 1. **Power conversion and power management system**
Due to its **low on-resistance** and **high current carrying capacity (120A)**, UT100N03-TA3-T-VB is widely used in power conversion systems. For example, in **switching power supplies (SMPS)**, **DC-DC converters** and **AC-DC adapters**, efficient power conversion can be achieved, losses can be reduced and power efficiency can be improved. Low on-resistance also enables it to maintain a low temperature rise under high current working conditions, which is suitable for power management modules that require high efficiency and stability.
# 6. **High-frequency applications and RF power amplifiers**
Due to its low input charge (Qg) and switching characteristics, UT100N03-TA3-T-VB is suitable for some **high-frequency switching applications**, such as RF power amplifiers, RF switching circuits, etc. These fields require fast response and high-efficiency switching devices, and the high switching speed of MOSFET makes its application effect in high-frequency fields more excellent.
# 7. **Consumer Electronics**
In some consumer electronics products that require high current drive, such as **portable audio systems**, **drones**, and **smart home devices**, UT100N03-TA3-T-VB can also provide these devices with efficient and stable power supply due to its low on-resistance and high current capability, ensuring their long-term stable operation.
In general, UT100N03-TA3-T-VB is suitable for a variety of fields from power management to high-power battery drive. With its excellent current carrying capacity, low on-resistance, and efficient switching performance, it is widely used in various modules of modern electronic products.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours