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UMBF170-VB Product details

Product introduction:

Product Introduction

**UMBF170-VB** is a high-efficiency unipolar N-channel MOSFET in a SOT23-3 package designed for low-power applications. It has a drain-source voltage (VDS) of 60V, which is suitable for medium and low voltage switching and current control tasks. The threshold voltage (Vth) of this product is 1.7V, which is suitable for low-voltage control applications and can switch effectively at a lower gate-source voltage. The on-resistance (RDS(ON)) is 2800mΩ at VGS=10V and 3100mΩ at VGS=4.5V, providing lower power loss and good current transfer efficiency. The maximum drain current (ID) of UMBF170-VB is 0.3A, which is very suitable for low-power and low-current control scenarios. This model adopts **Trench technology** to effectively reduce switching losses and improve working efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-N 60V 20(±V) 1.7V 0.3A 2800mΩ
Detailed parameter description

| Parameter| Value|
|-----------------------|--------------|
| **Package type** | SOT23-3 |
| **Configuration** | Unipolar N-channel MOSFET |
| **Drain-source voltage (VDS)** | 60V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 1.7V |
| **On-resistance (RDS(ON))** | 3100mΩ@VGS=4.5V|
| **On-resistance (RDS(ON))** | 2800mΩ@VGS=10V|
| **Maximum drain current (ID)** | 0.3A |
| **Technology type** | Trench technology|

Domain and module applications:

Product application areas and module examples

1. **Low-power power switching and current control**:
The low drain-source voltage and low on-resistance of UMBF170-VB make it suitable for low-power power switching and current regulation applications. In low-power power modules, chargers, and portable devices, this MOSFET can be used as an efficient switching element to optimize power management and extend battery life. It can provide reliable switching and conduction functions in a low voltage and current range.

2. **LED drive circuit**:
In the LED drive circuit, UMBF170-VB can be used as a switching element to control the switching frequency and brightness adjustment of the LED. Due to its low resistance characteristics and efficient current transmission capability, this MOSFET can effectively reduce the power consumption of the LED drive circuit and maintain a stable output power, which is particularly suitable for energy-saving LED lamps and backlight applications.

3. **Small battery management system**:
In the battery management system (BMS), UMBF170-VB can be used for battery current regulation and protection. Its lower on-resistance reduces power loss and is ideal for small battery systems that require precise control of current and voltage. It is particularly suitable for consumer electronics such as mobile phones, handheld devices, and low-power wearable devices.

4. **Signal Switch and Analog Switch Circuits**:
UMBF170-VB can also be used in signal switch and analog switch circuits, especially in low-voltage applications. In modules such as data transmission, signal routing, and audio signal processing, it can provide fast and stable switching functions to ensure signal transmission quality and reduce noise interference.

5. **Sensor Modules and Low-Power Communication Devices**:
In sensor modules and low-power wireless communication devices, UMBF170-VB is suitable for power management and signal switching functions. Due to its low power consumption characteristics, UMBF170-VB can optimize the power consumption of sensors and wireless communication modules and extend the working time of the equipment. It is especially suitable for applications in smart homes, Internet of Things (IoT) devices, and various environmental monitoring sensors.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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