Product introduction：
UMBF170L-AE3-R-VB MOSFET Product Introduction
**UMBF170L-AE3-R-VB** is a single N-channel MOSFET in a SOT23-3 package, designed for low-power, high-efficiency electronic applications. Its maximum drain-source voltage (V_DS) is 60V, suitable for circuits in the medium voltage range. The gate-source voltage (V_GS) of this MOSFET is ±20V, and it can operate stably over a wide voltage range. It has a turn-on voltage (V_th) of 1.7V, which allows it to turn on quickly even at lower gate voltages, ensuring more efficient operating performance.
UMBF170L-AE3-R-VB is manufactured based on Trench technology, which can significantly reduce the on-resistance (R_DS(ON)) of the MOSFET, thereby reducing power loss and improving circuit efficiency. At V_GS=4.5V, the on-resistance is 3100mΩ, and at V_GS=10V it is 2800mΩ. This MOSFET has high stability and reliability, and is suitable for circuits that require lower current control. Its maximum drain current (I_D) is 0.3A, and is suitable for use in medium and low power electronic devices, with excellent load capacity.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
60V |
20（±V） |
1.7V |
0.3A |
|
|
2800mΩ |
|
Detailed parameter description
- **Model**: UMBF170L-AE3-R-VB
- **Package type**: SOT23-3
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (V_DS)**: 60V
- **Gate-source voltage (V_GS)**: ±20V
- **Throughput voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 3100mΩ (V_GS = 4.5V)
- 2800mΩ (V_GS = 10V)
- **Drain current (I_D)**: 0.3A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Maximum power dissipation**: 500mW (determined by actual working environment and thermal design)
Domain and module applications：
Application areas and module examples
**1. Battery management system: **
The low on-resistance and high voltage handling capability of UMBF170L-AE3-R-VB make it very suitable for use as a switching element in battery management systems. In the battery charge and discharge management and protection circuits, MOSFET can effectively control the flow of current while reducing power loss, extending battery life and improving system efficiency.
**2. Low-power switching circuit: **
This MOSFET has a leakage current carrying capacity of 0.3A and is suitable for low-power switching circuits, such as signal switches in micro devices. In microcontroller-driven devices, as a fast switch, UMBF170L-AE3-R-VB can work stably under low power requirements to ensure system reliability and response speed.
**3. Power management system: **
UMBF170L-AE3-R-VB has low on-resistance and efficient Trench technology, which is suitable for various power management systems, especially as a switching element in small DC-DC converters. MOSFET can effectively reduce energy loss and improve conversion efficiency, making it very suitable for portable power devices such as smart watches, mobile power supplies and portable chargers.
**4. Wireless communication equipment: **
In wireless communication equipment, UMBF170L-AE3-R-VB can be used as a power switch or signal conditioning element. For example, as a switching element in a radio frequency (RF) circuit, it can switch quickly and stably during signal modulation to ensure efficient and stable data transmission.
**5. Sensor and low-power microcontroller system: **
UMBF170L-AE3-R-VB is suitable for sensors and low-power microcontroller systems due to its small package and low power consumption. For example, in smart home systems, environmental monitoring sensors and other devices, MOSFET can be used as power control and signal switching components to effectively improve the energy efficiency and response speed of the overall system.
Through these application examples, it can be seen that **UMBF170L-AE3-R-VB**, as a high-performance MOSFET in low-power applications, is suitable for power management, switching circuits, low-power control systems and other fields, and has broad application prospects in smart devices and electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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