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UM6J1NTN-VB Product details

Product introduction:

Product Introduction

**UM6J1NTN-VB** is a bipolar P+P MOSFET in SC70-6 package, designed for low power and compact applications. It has a drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) of ±12V, suitable for a variety of low-voltage control circuits. This MOSFET provides a lower on-resistance (RDS(ON)), which is 235mΩ @ VGS=2.5V and 155mΩ @ VGS=4.5V, respectively, so that it can still maintain high efficiency at low voltage and low current. Its maximum drain current is -1.8A, which is suitable for use in circuits that require fine current control and compact design. The use of Trench technology gives it good switching performance and efficient power conversion in low-power applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SC70-6 Dual-P+P -20V -0.6V -1.8A 235mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SC70-6 Dual-P+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SC70-6 Dual-P+P -20V -0.6V -1.8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SC70-6 Dual-P+P -20V -0.6V -1.8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SC70-6 Dual-P+P
Detailed parameter description

- **Package type**: SC70-6
- **Configuration type**: Bipolar P+P type
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**:
- 235mΩ @ VGS=2.5V
- 155mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: -1.8A
- **Technology type**: Trench

Domain and module applications:

Applications and module examples

1. **Low voltage power control**:
The UM6J1NTN-VB is suitable for low voltage power systems, especially in low power power management where efficient switching is required. The low on-resistance of this MOSFET enables it to effectively control the flow of current and reduce energy loss, which is particularly important in portable battery-powered devices, such as portable audio devices or sensor modules.

2. **Low power switching circuits**:
In low power switching circuits, the UM6J1NTN-VB can provide precise switching control, which is particularly suitable for power management in smart homes and consumer electronics. These devices usually need to switch efficiently at a lower operating voltage, and the low RDS(ON) characteristics of this MOSFET ensure excellent performance in these applications.

3. **Load switch and battery management**:
The UM6J1NTN-VB can be widely used in battery management and load switch modules, especially in power switches for rechargeable batteries. This MOSFET can provide low-power, high-efficiency control during battery charging and discharging, and is particularly suitable for compact battery-driven products such as mobile devices, smart watches and wireless headphones.

4. **Reverse current protection circuit**:
In circuits that require reverse current protection, the UM6J1NTN-VB can be used as a reverse current protection switch to protect the circuit from damage caused by reverse current. Due to its low on-resistance and efficient switching characteristics, it can provide reliable protection, especially in small battery-powered portable devices and power converters.

5. **Load current control and drive circuit**:
Due to its bipolar P+P type configuration, the UM6J1NTN-VB is suitable for load current control and drive circuits. In some precision load control applications, such as LED drive circuits or small motor control, it can provide accurate current regulation to ensure stable load operation.

6. **Power management and automation systems**:
In automation systems or low-power power modules, the UM6J1NTN-VB can be used as a power management component to help achieve precise regulation of voltage and current. This MOSFET can be widely used in smart hardware, IoT devices, and other low-power systems to ensure efficient power management and stable power supply.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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