Product introduction：
UK3019L-AE3-R-VB MOSFET Product Introduction
**UK3019L-AE3-R-VB** is a unipolar N-channel MOSFET in SOT23-3 package, suitable for low-power, high-efficiency electronic circuit design. This MOSFET has a drain-source voltage (V_DS) of 60V and can work stably at a gate-source voltage (V_GS) of up to ±20V, suitable for various applications requiring high efficiency and reliability. Its turn-on voltage (V_th) is 1.7V, ensuring that it can be started at low voltage. It has a low on-resistance (R_DS(ON)) at different gate voltages, which are 3100mΩ (V_GS=4.5V) and 2800mΩ (V_GS=10V), respectively, thereby effectively reducing energy loss and improving system efficiency.
The rated drain current (I_D) of this MOSFET is 0.3A, which is suitable for low-power drive and control circuit applications. Manufactured based on Trench technology, this MOSFET provides lower on-resistance and is suitable for use in various electronic modules that require higher performance and stability.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
60V |
20（±V） |
1.7V |
0.3A |
|
|
2800mΩ |
|
Detailed parameter description
- **Model**: UK3019L-AE3-R-VB
- **Package type**: SOT23-3
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (V_DS)**: 60V
- **Gate-source voltage (V_GS)**: ±20V
- **Throughput voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 3100mΩ (V_GS = 4.5V)
- 2800mΩ (V_GS = 10V)
- **Drain current (I_D)**: 0.3A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Power dissipation**: Maximum power dissipation is 500mW (depending on the application scenario)
Domain and module applications：
Applications and module examples
**1. Power management system: **
The low on-resistance and high stability of UK3019L-AE3-R-VB make it very suitable for power management systems. For example, in DC-DC converters, as a switching element, it can effectively reduce conversion losses and improve system efficiency.
**2. Low-power power control: **
Due to its low on-resistance and small leakage current, UK3019L-AE3-R-VB is very suitable for low-power power systems, especially in battery-powered devices in the fields of portable devices, mobile power supplies, etc., to optimize energy use and extend battery life.
**3. Electronic switch: **
In low-power switching circuits, UK3019L-AE3-R-VB can be used as a signal switch. For example, in a sensor module or a microcontroller-controlled switching circuit, MOSFET can effectively switch signals or currents to ensure efficient operation of the circuit.
**4. Wearable devices: **
In wearable devices, size and power constraints require the use of efficient small components. The small package and low power consumption of UK3019L-AE3-R-VB make it very suitable for smart watches, health monitoring devices and other fields, helping to extend the battery life of the device.
**5. Battery protection circuit: **
Due to its applicable high gate voltage (±20V) and low on-resistance, UK3019L-AE3-R-VB can be used in battery protection circuits, such as overcharge and over-discharge protection modules, to provide stable switching operation and ensure battery safety.
Through these application examples, we can see the important role of UK3019L-AE3-R-VB MOSFET in low-power electronic devices and efficient power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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