UK3018G-AL3-R-VB Product details
Product introduction:
**UK3018G-AL3-R-VB** is a unipolar N-channel MOSFET in SOT23-3 package with a wide voltage tolerance range (VDS: 60V), suitable for low-power, low-current switching applications. The maximum drain current of this MOSFET is 0.3A, and it has excellent on-resistance performance (RDS(ON) = 3100mΩ @ VGS=4.5V and 2800mΩ @ VGS=10V). Its gate-source voltage (VGS) is 20V (±), the turn-on threshold voltage (Vth) is 1.7V, and it has a good Trench technology structure. It is suitable for various low-power circuits, portable devices and load control modules, especially in environments with high efficiency and low power consumption requirements, and plays an important role.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | 2800mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
- **Model**: UK3018G-AL3-R-VB
- **Package type**: SOT23-3
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ @ VGS=4.5V
- 2800mΩ @ VGS=10V
- **Maximum drain current (ID)**: 0.3A
- **Technology**: Trench technology
Domain and module applications:
1. **Portable electronic devices**: UK3018G-AL3-R-VB MOSFET is suitable for portable devices such as smart watches, Bluetooth headsets, etc. Due to its low on-resistance and excellent switching performance, it can effectively reduce power consumption and thus extend battery life.
2. **Battery-powered systems**: This MOSFET can be used in battery management systems (BMS), especially in charging and discharging control circuits with low current requirements. Its low on-resistance effectively reduces power loss when charging the battery and improves system efficiency.
3. **Load switches**: In many low-power load control modules, UK3018G-AL3-R-VB MOSFET can be used for efficient switching control of loads. Whether it is high-frequency switching in switching power supplies or driving small motors, MOSFETs can provide reliable switching performance.
4. **Communication equipment**: This MOSFET is suitable for RF circuits and low-power transmission systems of wireless communication equipment, providing efficient power switching performance.
5. **Low-power sensor system**: In sensor applications, UK3018G-AL3-R-VB is suitable for sensor switches in low-power mode, ensuring the lowest overall system power consumption and extending operating time.
6. **Small circuit board design**: Due to its small SOT23-3 package, it is suitable for the design of small electronic products and compact circuit boards, especially those application scenarios with strict requirements on space and power consumption.
Through its excellent electrical characteristics and high performance, UK3018G-AL3-R-VB can play a vital role in a variety of modern electronic devices and modules.
Technical support:
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