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UF8010G-TA3-T-VB Product details

Product introduction:

**UF8010G-TA3-T-VB Product Introduction: **

UF8010G-TA3-T-VB is a high-performance N-channel MOSFET in TO220 package, suitable for high-efficiency power management and power switching applications. Its maximum drain-source voltage (VDS) is 100V, the gate-source voltage (VGS) can withstand a maximum of ±20V, it has a maximum drain current (ID) of 100A, and uses advanced Trench technology, characterized by low on-resistance (RDS(ON)) and high current carrying capacity. The device has a threshold voltage (Vth) of 2.5V, which can provide excellent conductivity and switching efficiency, and is very suitable for power conversion systems that require high efficiency and low power consumption.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 100V 2.5V 100A 9mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 100V 2.5V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 100V 2.5V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
**Detailed parameter description: **

- **Package type**: TO220
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 20mΩ (VGS = 4.5V)
- 9mΩ (VGS = 10V)
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench technology (low on-resistance and high current carrying capacity)

Domain and module applications:

**Applicable fields and modules:**

UF8010G-TA3-T-VB, as a high-performance MOSFET, is widely used in the following fields and modules:

1. **Electric vehicle (EV) power management**:
- In the battery management system and charger of electric vehicles, UF8010G-TA3-T-VB has an extremely low on-resistance (9mΩ @ VGS=10V), which can improve efficiency and reduce power loss. It is very suitable for high current drive applications such as motor drive circuits, battery charging and DC-DC converters.

2. **Power conversion module**:
- In high-efficiency power conversion systems (such as DC-DC converters and AC-DC power supplies), UF8010G-TA3-T-VB can reduce heat loss with its low on-resistance and ensure the stability and efficiency of the system under high load.

3. **Industrial Automation and Control Systems**:
- Due to the excellent performance of this MOSFET in high current and high voltage applications, it can also play an important role in power control modules, servo drives, and power supplies in industrial automation systems, especially in situations where power conversion efficiency is strictly required.

4. **Solar Inverters**:
- Solar inverters need to efficiently convert the DC power generated by solar panels into AC power. The high efficiency performance of UF8010G-TA3-T-VB can ensure that solar inverters achieve optimal power output and minimize energy losses in applications in different industries.

5. **Data Center and Server Power Management**:
- In high-performance computing platforms and data centers, UF8010G-TA3-T-VB can be used as a key component of DC-DC converters to support high power density applications and ensure the efficiency and reliability of server power supplies.

Through these applications, UF8010G-TA3-T-VB demonstrates its outstanding performance in the field of high-efficiency power management and power switching, and is an indispensable key component in modern high-power electrical systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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