Product introduction：
**1. Product Introduction: **
**TSP630M-VB** is a **single N-Channel MOSFET**, in **TO220 package**, designed for medium and high voltage applications. Its maximum drain-source voltage (VDS) is 200V, suitable for switching circuits in the medium voltage range. This MOSFET adopts **Trench technology** and has a low **RDS(ON)**, which is 270mΩ at VGS=10V, which can effectively reduce conduction losses and improve energy efficiency. The maximum drain current (ID) is 10A, which is suitable for power management and switching applications.
**TSP630M-VB** has a gate threshold voltage (Vth) of 3V, ensuring stable switching even at low gate-source voltages. The excellent switching performance of this MOSFET makes it suitable for power management, current control and voltage conversion circuits in various electronic devices. Its low on-resistance and high switching speed make it an ideal choice for high-performance applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
200V |
|
3V |
10A |
|
|
270mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
200V |
|
3V |
10A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
200V |
|
3V |
10A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
**2. Detailed parameter description: **
- **Model**: TSP630M-VB
- **Package type**: TO220
- **Configuration**: Single N-Channel MOSFET
- **Maximum drain-source voltage (VDS)**: 200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- **VGS = 10V**: 270mΩ
- **VGS = 4.5V**: 310mΩ
- **Maximum drain current (ID)**: 10A
- **Maximum power loss (Pd)**: 125W
- **Input capacitance (Ciss)**: About 500pF
- **Output capacitance (Coss)**: About 100pF
- **Reverse recovery time (Trr)**: approx. 150ns
- **Operating temperature range**: -55°C to +150°C
- **Switching time**:
- Turn-on time (ton): approx. 70ns
- Turn-off time (toff): approx. 120ns
- **Technology type**: Trench technology
- **Reverse leakage current (IR)**: <1µA @ VDS = 200V
Domain and module applications：
**3. Application fields and module examples: **
**TSP630M-VB** has medium voltage carrying capacity and low on-resistance, and is widely used in various power conversion, switch control and power management systems. The following are typical application fields of this product:
# **1. Power management and DC-DC converters **
**TSP630M-VB** is widely used in **power management** and **DC-DC converters**. The low RDS(ON) characteristics of this MOSFET make it excel in high-frequency switching applications, which can reduce power loss and improve conversion efficiency. In low-voltage and medium-voltage environments, it can effectively convert voltage and support stable output from low-voltage DC power supplies.
# **6. Electric vehicles and charging systems **
**TSP630M-VB** is also used in **electric vehicles (EVs)** and **charging systems**. It can be used in the power management system of electric vehicles to control the charging and discharging process of battery packs. Due to its good switching performance, it can provide efficient energy management in battery charging, battery protection and energy recovery systems of electric vehicles.
# **7. Overcurrent protection circuits**
In applications where circuits need to be protected from overcurrent or overvoltage damage, **TSP630M-VB** is an ideal choice. The switching characteristics of the MOSFET can ensure fast response and quickly disconnect when the current exceeds the set value, thereby protecting the entire circuit system.
# **8. Electric drive system**
**TSP630M-VB** is suitable for various **electric drive systems**, especially in industrial applications with higher power. Its 10A drain current enables it to control the current of large motors or loads, ensuring stable operation of the system and improving power transmission efficiency.
**Summary: **
**TSP630M-VB** is a high-efficiency **single N-Channel MOSFET** with a maximum drain-source voltage of 200V and a maximum drain current of 10A, using **Trench technology** to provide lower on-resistance. The device is widely used in power management, DC-DC converters, power tools, battery management, photovoltaic inverters, electric vehicles and their charging systems, etc. Its low on-resistance and good switching performance make it an ideal power switch solution in medium voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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