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TSM4N80CZ C0-VB Product details

Product introduction:

1. Product Introduction

**TSM4N80CZ C0-VB** is a single N-type MOSFET in a TO220 package with a drain-source voltage (VDS) of 850V and a gate-source voltage (VGS) of 30V. Its gate threshold voltage (Vth) is 3.5V and the maximum drain current (ID) is 4A. This product adopts Plannar technology and has a low on-resistance (RDS(ON) = 2700mΩ@VGS=10V), which is suitable for high-voltage and high-power applications.

The high voltage carrying capacity of TSM4N80CZ C0-VB makes it widely used in power management, switching power supplies, inverters, industrial power control and other fields. It is particularly suitable for equipment that requires high-voltage switching and lower power consumption, such as power converters and power modules. Due to its high voltage withstand capability, this MOSFET is able to handle large voltage and current loads while maintaining stable performance in high temperature environments.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 850V 3.5V 4A 2700mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 850V 3.5V 4A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 850V 3.5V 4A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
2. Detailed parameter description

- **Model**: TSM4N80CZ C0-VB
- **Package**: TO220
- **Configuration**: Single N-type MOSFET
- **Drain-source voltage (VDS)**: 850V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2700mΩ @ VGS=10V
- **Maximum drain current (ID)**: 4A
- **Maximum power loss**: 30W (based on current and voltage conditions)
- **Operating temperature range**: -55°C to +150°C
- **Maximum reverse recovery time**: 100ns (typical)
- **Technology**: Plannar technology
- **Thermal resistance (Junction to Case)**: 2°C/W
- **Maximum reverse leakage current**: 1mA @ VDS=850V

Domain and module applications:

3. Application fields and module examples

**1. Power management system**
TSM4N80CZ C0-VB is suitable for high-voltage power management systems, especially in high-power conversion power supplies and power conditioners. Due to its 850V drain-source voltage capability, it is suitable for switching control of high-voltage input power supplies. Its low on-resistance and high current carrying capacity enable it to provide efficient power switching in high-voltage power conversion systems.

For example, in AC-DC power adapters, TSM4N80CZ C0-VB can be used as a switching element to effectively convert the input AC power into a stable DC power supply, which is widely used in computers, telecommunications and home appliances.

**2. Inverters and solar systems**
The high voltage carrying capacity of this model of MOSFET makes it particularly suitable for inverter circuits. Inverters convert DC power supplies (such as solar panels or batteries) into AC power. The TSM4N80CZ C0-VB is capable of handling high currents and high voltages in inverter circuits, making it suitable for use in energy conversion systems.

For example, the TSM4N80CZ C0-VB can act as a key switching element in a solar inverter, helping to convert the DC power generated by solar panels into AC power for use in home or industrial applications.

**3. Switching Power Supplies**
The TSM4N80CZ C0-VB is also widely used in switching power supply designs, especially in applications that require high voltage and high efficiency. Its low RDS(ON) value and high voltage tolerance make it an ideal choice for efficient switching power supply designs. In these applications, the switching speed and on-resistance of the MOSFET are critical to optimizing power conversion efficiency.

For example, in LED driver power supplies, computer power modules, and power adapters, the TSM4N80CZ C0-VB can be used in the power conversion portion of the switching power supply circuit to provide stable current control and efficient energy conversion.

**4. Industrial Power Control**
TSM4N80CZ C0-VB is suitable for various industrial power control applications, especially in high voltage and high current environments. Due to its strong voltage resistance and low power loss, it can provide stable performance in harsh environments.

For example, TSM4N80CZ C0-VB can be used for switching control of motor drives and power equipment, especially in variable frequency drives (VFDs) and motor control systems, providing precise and efficient power regulation.

**5. High-voltage load switch**
Due to its high voltage carrying capability and low on-resistance, TSM4N80CZ C0-VB is very suitable for high-voltage load switching applications. In such applications, MOSFETs are used to achieve fast current switching while ensuring low power consumption and low heat generation.

For example, in industrial automation systems, TSM4N80CZ C0-VB can be used as a high-voltage load switch to switch the power path in various power equipment.

**Summary**
TSM4N80CZ C0-VB is a high-voltage N-type MOSFET suitable for power management, power conversion, inverters, motor control and high-voltage load switching. Its 850V VDS and 4A ID enable it to provide stable performance in high-voltage, high-power applications, while its low on-resistance and high withstand voltage capability enable it to have high energy efficiency and long and reliable working life in these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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