Product introduction:
1. Product Introduction
**TSM2N7002KCX RF-VB** is a single N-type MOSFET in SOT23-3 package with 60V drain-source voltage (VDS) and ±20V gate-source voltage (VGS). Its gate threshold voltage (Vth) is 1.7V, and the on-resistance RDS(ON) is 3100mΩ (at VGS=4.5V) and 2800mΩ (at VGS=10V). The maximum continuous drain current is 0.3A. This MOSFET adopts Trench technology, with low on-resistance and good switching performance, suitable for low-power, low-current switching applications.
TSM2N7002KCX RF-VB is particularly suitable for switching control of low-power circuits and low-current loads. Due to its low on-resistance and low threshold voltage, it can achieve fast switching control, which is very suitable for consumer electronics, battery-powered devices and other low-power modules.
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Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
SOT23-3 |
Single-N |
60V |
20(±V) |
1.7V |
0.3A |
|
|
2800mΩ |
|
2. Detailed parameter description
- **Model**: TSM2N7002KCX RF-VB
- **Package**: SOT23-3
- **Configuration**: Single N-type MOSFET
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ @ VGS=4.5V
- 2800mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 0.3A
- **Technology**: Trench technology
- **Maximum power consumption (Ptot)**: 300mW (typical value, actual power consumption will be calculated based on operating conditions and ambient temperature)
- **Operating temperature range**: -55°C to +150°C
- **Thermal resistance**: 250°C/W (from junction to heat sink)
- **Applications**:
- Battery powered devices
- Low power switching
- Low power power management
- Current protection switches
- Microcontroller and sensor interfaces
Domain and module applications:
3. Application fields and module examples
**1. Battery-powered devices**
TSM2N7002KCX RF-VB is very suitable for battery-powered devices, especially for switching applications that control small currents. For example, in wearable devices (such as smart watches and health monitors), this MOSFET can control the current flow between the battery and the load, helping to extend the battery life of the device and reduce unnecessary energy loss.
**2. Low-power switching applications**
This MOSFET is very suitable for low-power switching applications, especially in low-voltage control systems. For example, in low-power DC power switches, battery chargers, and USB power management, the TSM2N7002KCX RF-VB can control the on and off of the power supply by quickly switching the current, thereby achieving effective control of the battery or other low-power loads.
**3. Low-power power management**
In low-power power management systems, the TSM2N7002KCX RF-VB is an ideal choice. It can efficiently control current switching and reduce power consumption, and is particularly suitable for power management modules of portable devices, such as in battery power monitoring systems, intelligent battery management systems, and low-power power adapters. Low on-resistance ensures that it has lower power loss in these systems, thereby improving overall energy efficiency.
**4. Current protection switch**
TSM2N7002KCX RF-VB can also be used in current protection switch applications. Due to its lower drain-source voltage and lower on-resistance, it can effectively control and protect the current path to prevent overcurrent faults in the system. In various battery protection modules, overcurrent protection, and smart power supplies, the current flow can be accurately controlled through MOSFET to ensure the safety and stability of the system.
**5. Microcontroller and sensor interface**
In microcontroller (MCU) and sensor interface applications, TSM2N7002KCX RF-VB is often used to achieve low-power control and power switching. It can be used as a switching element between the microcontroller and the sensor to help realize the power management and state switching of the system, ensuring that low-power devices remain efficient and reduce power consumption during long-term operation.
**6. Consumer Electronics**
TSM2N7002KCX RF-VB is a common component in consumer electronics, especially for small battery-driven devices. In consumer electronics such as mobile phones, Bluetooth headsets, remote controls and portable speakers, it can be used as a power switch to help realize intelligent power control and extend the standby time of the device.
**Summary**
TSM2N7002KCX RF-VB is a low-power, low-voltage N-type MOSFET that is particularly suitable for battery-powered low-power devices, switch control of small current loads and power management systems. With its low on-resistance, fast switching characteristics and compact package, it provides high efficiency and long-term operation in consumer electronics, smart devices, sensor systems and battery management modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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