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TSM2323CX RF-VB Product details

Product introduction:

1. **Product Introduction: TSM2323CX RF-VB**

TSM2323CX RF-VB is a high-performance P-channel MOSFET in SOT23-3 package, designed for low-voltage, low-power switching applications. Its maximum drain-source voltage (V_DS) is -30V, suitable for negative voltage power systems. The gate drive voltage (V_GS) of this product is ±20V, the threshold voltage (V_th) is -1.7V, and it has a low on-resistance (R_DS(ON)), which is 54mΩ at V_GS=4.5V and 46mΩ at V_GS=10V, ensuring efficient current transmission. The maximum drain current (I_D) is -5.6A, and the Trench technology is used to provide low switching losses, suitable for high-speed switching and high-efficiency power conversion applications. Its low on-resistance and high current capability make it particularly suitable for various low-voltage power management systems, load driving and reverse current control applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-P -30V 20(±V) -1.7V -5.6A 46mΩ
2. **Detailed parameter description:**

- **Model**: TSM2323CX RF-VB
- **Package type**: SOT23-3
- **Configuration**: Single-P-Channel
- **Drain-source voltage (V_DS)**: -30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: -1.7V
- **On-resistance (R_DS(ON))**:
- 54mΩ (at V_GS=4.5V)
- 46mΩ (at V_GS=10V)
- **Maximum leakage current (I_D)**: -5.6A
- **Technology type**: Trench
- **Maximum power loss**: Evaluated according to actual working conditions (ambient temperature, cooling solution, etc.)
- **Operating temperature range**: -55°C to +150°C
- **Switching speed**: Suitable for high frequency switching applications, low switching losses
- **Maximum drain-source voltage**: -30V, suitable for low voltage applications
- **Gate drive voltage range**: ±20V, suitable for a variety of control voltage requirements

Domain and module applications:

3. **Application fields and module examples:**

1. **Low voltage switch mode power supply (SMPS)**
TSM2323CX RF-VB is an ideal P-channel MOSFET for low voltage switch mode power supply systems (SMPS). Its low on-resistance (R_DS(ON)) and high leakage current capability (-5.6A) enable it to operate efficiently in a low voltage range, especially suitable for efficient power conversion and management of 3.3V to 5V voltage systems.

2. **Reverse current control**
In systems that require reverse current control, TSM2323CX RF-VB can be used as an ideal reverse current switch. Due to its P-channel structure and low on-resistance, it can efficiently handle reverse current and is widely used in battery protection, reverse current detection and protection circuits, especially in situations where reverse current flow in the power supply direction is not desired.

3. **LED drive circuit**
TSM2323CX RF-VB is suitable for LED drive circuits, especially in situations of reverse current and low voltage control. Its low on-resistance and high current capability make this MOSFET very suitable for driving multiple LED lamp beads or light strips, reducing power loss and heat while providing stable current.

4. **Load switch control**
In the load switch control circuit, the TSM2323CX RF-VB has a low on-resistance, which enables it to efficiently control the current when switching the load, and is suitable for various low-power load control, such as load switching in portable power supplies, wireless devices or other low-power control applications.

5. **Battery-powered devices**
Due to its maximum drain current of -5.6A, the TSM2323CX RF-VB performs well in battery-powered devices, especially for battery management systems (BMS) that require reverse current protection. In battery chargers, power tools, and mobile power systems, this MOSFET can provide low-loss, high-efficiency power switching functions to ensure the stability and safety of the battery system.

6. **Automotive Electronic Systems**
In automotive electronics, the TSM2323CX RF-VB can be used for low-voltage power management modules, such as on-board sensors, audio systems, and other auxiliary power modules. Its low on-resistance and high current capability make it ideal for handling small load switches, protection circuits, and power conversion for on-board electronic devices.

7. **Motor Drive Control**
In small motor drive control systems, the TSM2323CX RF-VB can be used as a switching element to drive DC motors or stepper motors. Its efficient switching characteristics and low R_DS(ON) help improve the efficiency of motor control systems and reduce power losses.

8. **Communication Equipment Power Management**
TSM2323CX RF-VB is widely used in power management systems for wireless communication equipment and base stations. In applications such as RF power supplies, wireless base stations, and power modules for telecommunication equipment, this MOSFET can perform efficient current control with low switching losses to ensure a stable power supply.

In summary, the TSM2323CX RF-VB is a P-channel MOSFET for low voltage applications with low on-resistance and high leakage current capability. It is widely used in low voltage switching power supplies, LED drivers, reverse current control, load switches, wireless devices, automotive electronics, and battery-powered devices. Its high efficiency makes it an ideal choice for a variety of power management, load control, and current protection circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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