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TSM2312CX RF-VB Product details

Product introduction:

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TSM2312CX RF-VB is a high-efficiency N-channel MOSFET in a SOT23-3 package, designed for low-voltage, high-current applications. The maximum drain-source voltage (VDS) of this MOSFET is 20V, which is suitable for low-voltage power switching and signal processing applications. Its gate-source threshold voltage (Vth) ranges from 0.5V to 1.5V, and it can be turned on at a lower gate voltage, which is suitable for low-power and high-efficiency control applications. The RDS(ON) value of TSM2312CX RF-VB is 42mΩ at VGS=2.5V and 28mΩ at VGS=4.5V, which gives it excellent conduction performance and can effectively reduce power loss. Its maximum drain current (ID) is 6A, which can withstand large current loads and is suitable for small devices and portable applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-N 20V 12(±V) 0.5~1.5V 6A 42mΩ
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- **Package**: SOT23-3
- **Configuration**: Single N-channel
- **VDS**: 20V
- **VGS**: ±12V
- **Vth**: 0.5V ~ 1.5V
- **RDS(ON)**: 42mΩ @ VGS=2.5V
- **RDS(ON)**: 28mΩ @ VGS=4.5V
- **ID**: 6A
- **Technology**: Trench

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Domain and module applications:

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1. **Low-voltage power management**: TSM2312CX RF-VB is widely used in low-voltage power management modules, such as mobile devices and portable power systems. Its low threshold voltage and low on-resistance characteristics enable it to operate efficiently at low voltages, ensuring efficient system power management.
2. **Wireless communication equipment**: This MOSFET is suitable for a variety of wireless communication equipment, especially RF signal amplifiers and switching circuits. Due to its low on-resistance and high-frequency characteristics, it can effectively reduce switching losses and power consumption, and improve signal processing efficiency.
3. **Portable devices**: TSM2312CX RF-VB is particularly suitable for portable devices such as Bluetooth, Wi-Fi modules and smartphones. Its compact SOT23 package and high current carrying capacity enable it to provide efficient current control in space-constrained devices.
4. **Low-power sensor systems**: In low-power sensor applications, such as smart home devices, Internet of Things (IoT) modules, etc., the TSM2312CX RF-VB can maintain low power consumption while ensuring efficient operation, and is suitable for sensor systems that require efficient current switching.
5. **Consumer electronics**: This MOSFET is also suitable for power regulation and control modules of various consumer electronics products, such as electronic toys, mobile battery management systems, etc. Its low-voltage operation and high-efficiency characteristics are very suitable for these low-power, high-integration application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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