Product introduction：
1. **Product Introduction - TSM2311CX RF-VB**
TSM2311CX RF-VB is a unipolar P-channel MOSFET in a compact SOT23-3 package, designed for low voltage, high efficiency applications. Its drain to source voltage (V_DS) is -20V and the gate drive voltage (V_GS) range is ±12V. The on-resistance (R_DS(ON)) of this MOSFET varies with gate voltage, 80mΩ at V_GS = 2.5V and 60mΩ at V_GS = 10V, with excellent switching characteristics and low conduction losses. The maximum drain current (I_D) is -4A, enabling it to handle medium current loads. Manufactured using Trench technology, the TSM2311CX RF-VB has low on-resistance and high switching speed, making it suitable for applications requiring high efficiency and miniaturized design. It is widely used in portable devices, switching power supplies, load switches and other high-efficiency power management systems.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P |
-20V |
12（±V） |
-0.8V |
-4A |
80mΩ |
|
60mΩ |
|
2. **Detailed parameter description**
- **Model**: TSM2311CX RF-VB
- **Package**: SOT23-3
- **Configuration**: Single-P-Channel
- **Drain to Source Voltage(V_DS)**: -20V
- **Gate Drive Voltage(V_GS)**: ±12V
- **Threshold Voltage(V_th)**: -0.8V
- **On-resistance(R_DS(ON))**:
- 80mΩ @ V_GS = 2.5V
- 65mΩ @ V_GS = 4.5V
- 60mΩ @ V_GS = 10V
- **Maximum Drain Current(I_D)**: -4A
- **Maximum Power Dissipation**: 1.25W (calculated based on thermal resistance and operating conditions)
- **Technology type**: Trench technology
- **Switching characteristics**:
- Turn-on delay time: 15ns
- Turn-off delay time: 25ns
- Reverse recovery time: 50ns
- **Maximum gate-source voltage (V_GS_max)**: ±12V
- **Maximum drain-source current (I_D_max)**: -4A
- **Gate charge (Qg)**: 10nC (typical)
- **Junction temperature range**: -55°C to +150°C
- **Thermal resistance (RthJC)**: 100°C/W (typical)
Domain and module applications：
3. **Application Fields and Module Examples**
- **Portable Devices**
The low drain-to-source voltage and small package of TSM2311CX RF-VB make it very suitable for portable devices such as smartphones, tablets, wearable devices, etc. It can be used as a switching element in power management, providing efficient energy conversion while reducing power loss. Its low on-resistance keeps it cooler during long-term use, ensuring the stability and safety of the device.
- **Load Switching**
TSM2311CX RF-VB is suitable for load switching applications due to its small size and high switching efficiency. For example, it can be used as a switch in battery-powered devices to switch the direction of current flow or control the opening and closing of devices. Its low on-resistance can effectively reduce losses during the switching process and extend the service life of the device.
- **Switching Power Supplies**
In switching power supply systems, the TSM2311CX RF-VB is ideally suited for use as a P-type MOSFET switch due to its low on-resistance and fast switching characteristics. It can be widely used in DC-DC converters, AC-DC power adapters, LED drivers, etc., providing efficient power conversion and stable power output.
- **Battery Management Systems**
In battery management systems, the TSM2311CX RF-VB is suitable for efficiently controlling the battery charging and discharging process. Due to its low on-resistance and high current handling capability, it can be used in battery protection circuits for smart batteries and electric vehicles (EVs), helping to improve the overall efficiency and safety of the battery.
- **Power Tools and Home Appliances**
This MOSFET can be used in power switching systems for power tools and home appliances, especially in designs that require high performance and miniaturization. The TSM2311CX RF-VB provides fast switching response and low power consumption, making it ideal for power management in high-power power tools or voltage conversion modules in household appliances.
- **Signal Switching and Modulators**
In signal switching and modulators, the TSM2311CX RF-VB can be used as a switching component in high-frequency signal modulation and demodulation processes, and is particularly suitable for small signal switching and processing applications in RF systems. Its high frequency characteristics and low gate charge enable it to perform well in RF and communication systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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