Product introduction：
1. **Product Introduction**
TSM2307CX RF-VB is a single P-channel MOSFET in SOT23-3 package with -30V drain-source voltage (VDS), suitable for medium and low voltage switch control applications. The maximum gate-source voltage (VGS) of this MOSFET is ±20V, the threshold voltage (Vth) is -1.7V, and it has a low on-resistance (RDS(ON)). At VGS=4.5V, RDS(ON) is 54mΩ, and at VGS=10V, RDS(ON) is 46mΩ, which can effectively reduce power loss. Its maximum drain current (ID) is -5.6A, and it uses Trench technology, which has excellent switching performance and low power consumption. TSM2307CX RF-VB is particularly suitable for medium and low power circuits that require fast switching, low conduction loss and high reliability.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P |
-30V |
20（±V） |
-1.7V |
-5.6A |
|
|
46mΩ |
|
2. **Detailed parameter description**
| **Parameter** | **Value** |
|----------------|--------------------|
| **Model** | TSM2307CX RF-VB |
| **Package** | SOT23-3 |
| **Configuration** | Single P-channel|
| **Drain-source voltage (VDS)** | -30V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | -1.7V |
| **On-resistance (RDS(ON))** | 54mΩ (VGS=4.5V)
46mΩ (VGS=10V) |
| **Maximum drain current (ID)** | -5.6A |
| **Technology** | Trench technology|
Domain and module applications：
3. **Application fields and modules**
The low RDS(ON) characteristics and moderate current capability of TSM2307CX RF-VB make it suitable for various medium and low power switching and control applications. The following are typical applications of this model in different fields:
- **Power management and protection circuits**: TSM2307CX RF-VB is widely used in power management circuits, especially for switch control in low voltage power systems. Its low on-resistance and high drain current capability make it excel in functions such as power switching, overvoltage and overcurrent protection.
- **Battery Management System (BMS)**: In battery management systems, TSM2307CX RF-VB is used in battery protection circuits to avoid overcurrent or overvoltage conditions. Its stable switching characteristics and low power consumption ensure the safety and long-term reliability of the battery.
- **Load switch circuit**: This MOSFET is often used in load switch circuits to quickly switch power or control the current of different modules. For example, in handheld devices or low-power devices, the TSM2307CX RF-VB is used to achieve low-power load switching to improve overall energy efficiency.
- **DC-DC Converter**: In DC-DC converters, the TSM2307CX RF-VB is able to provide efficient voltage conversion as the main switching element. Its low RDS(ON) characteristics ensure lower power loss during the conversion process and are widely used in portable power devices, LED drivers and other fields.
- **Portable Devices and Wireless Communications**: In many portable devices, the TSM2307CX RF-VB can be used for efficient power management. Its fast switching and low power consumption characteristics make it particularly suitable for portable battery-powered devices, wireless communication modules (such as RF amplifiers and RF switches) and other fields.
- **Low-power Switching Power Supply**: This MOSFET is also suitable for low-power switching power supplies (such as 5V/12V conversion power supplies). Due to its lower on-resistance and higher current capability, it can effectively support the design of small-power switching power supplies, reduce power losses and improve efficiency.
In summary, TSM2307CX RF-VB MOSFET is widely used in power management, portable devices, battery protection, DC-DC converters and load switches due to its low on-resistance, high-efficiency switching performance and good current carrying capacity. It is particularly suitable for low and medium voltage circuit designs that require low power consumption, high reliability and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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