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TSM2306CX RF-VB Product details

Product introduction:

1. **Product Introduction: TSM2306CX RF-VB**

TSM2306CX RF-VB is a high-performance N-channel MOSFET in SOT23-3 package, designed for low-voltage and high-efficiency switching applications. Its maximum drain-source voltage (V_DS) is 30V, the gate drive voltage (V_GS) is ±20V, and the threshold voltage (V_th) is 1.7V, which is suitable for low-voltage power supply systems. The on-resistance (R_DS(ON)) of TSM2306CX RF-VB is 33mΩ at V_GS=4.5V and 30mΩ at V_GS=10V, with very low on-resistance and high-efficiency switching performance. This product can provide a maximum drain current (I_D) of 6.5A, and adopts Trench technology, with excellent current transmission capability, low power consumption and low switching loss, suitable for various high-performance and miniaturized power management systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-N 30V 20(±V) 1.7V 6.5A 30mΩ
2. **Detailed parameter description:**

- **Model**: TSM2306CX RF-VB
- **Package type**: SOT23-3
- **Configuration**: Single-N-Channel
- **Drain-source voltage (V_DS)**: 30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 33mΩ (at V_GS=4.5V)
- 30mΩ (at V_GS=10V)
- **Maximum leakage current (I_D)**: 6.5A
- **Technology type**: Trench
- **Maximum power loss**: Evaluated according to actual working conditions (ambient temperature, cooling solution, etc.)
- **Operating temperature range**: -55°C to +150°C
- **Switching speed**: Suitable for high frequency switching applications, low switching losses
- **Maximum drain-source voltage**: 30V, suitable for low voltage applications
- **Gate drive voltage range**: ±20V, suitable for a variety of control voltage requirements

Domain and module applications:

3. **Applications and module examples:**

1. **Low voltage switching power supply (SMPS)**
TSM2306CX RF-VB is an ideal MOSFET for low voltage switching power supplies. Due to its low on-resistance (R_DS(ON)) and high leakage current (6.5A), it can efficiently convert power and reduce losses, and is particularly suitable for efficient power management in 3.3V to 5V voltage systems.

2. **Mobile device power management**
In mobile devices such as smartphones, tablets and wearable devices, TSM2306CX RF-VB can provide efficient power conversion and low power consumption for miniaturized power systems. Its SOT23-3 package makes it ideal for space-constrained applications, while its low R_DS(ON) and high current capability support low-power, high-efficiency power supply designs.

3. **RF Applications**
Due to its excellent switching performance, the TSM2306CX RF-VB performs well in RF modules, especially in RF applications such as RF amplifiers, voltage regulators, and high-frequency switching power supplies. The MOSFET can switch quickly while providing low losses, thereby improving the transmission efficiency and stability of RF signals.

4. **LED Drive Circuit**
In the LED drive circuit, the TSM2306CX RF-VB can efficiently control the current to ensure the stable operation of the LED. Its low R_DS(ON) characteristics make it suitable for large current control while maintaining low power loss, especially for LED systems that require high current support and fast switching response.

5. **Wireless Communication Equipment Power Management**
In wireless communication equipment, the TSM2306CX RF-VB can provide low power consumption and efficient power management. Especially in RF modules and small battery-powered devices that require fast response, the fast switching capability and low on-resistance of this MOSFET make it an ideal power conversion component.

6. **Automotive Electronics (Low-Power Power Management)**
In automotive electronic systems, the TSM2306CX RF-VB is suitable for low-power power management and miniaturized modules such as vehicle sensors, auxiliary power systems, and vehicle wireless communication modules. Its low R_DS(ON) and high current capability enable it to provide efficient current transmission in these low-power applications, helping to improve overall system efficiency.

7. **Sensor Interface and Control Circuits**
TSM2306CX RF-VB is widely used in sensor interfaces and control systems. It can efficiently control current and ensure signal stability, and is suitable for sensor control circuits in smart homes, industrial automation, and medical equipment. Its small package and low power consumption make it particularly suitable for application scenarios with precision control and fast response.

8. **Low Power Inverter**
TSM2306CX RF-VB is also suitable for low power inverter systems, especially in power management of small photovoltaic battery packs, portable solar equipment and power tools. This MOSFET can achieve fast, low loss current switching in low voltage and high efficiency power conversion systems to provide a stable output voltage.

In summary, TSM2306CX RF-VB is an N-channel MOSFET suitable for low voltage, high efficiency power management, RF applications and LED driving. Its low on-resistance, high leakage current capability and fast switching characteristics make it an ideal choice for mobile devices, RF modules, battery-powered devices, sensor interfaces and many other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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