Product introduction:
TSM2301ACX RF-VB MOSFET Product Introduction
TSM2301ACX RF-VB is a unipolar P-Channel power MOSFET in SOT23-3 package, mainly suitable for low voltage, high efficiency switch control system. The maximum drain-source voltage (V_DS) of this MOSFET is -20V, which is suitable for low voltage power management, load switch, protection circuit and other applications. Its gate-source voltage (V_GS) is up to 12V, and it has a low on-resistance (R_DS(on)), providing efficient current transmission. The turn-on voltage threshold (V_th) of this MOSFET is -0.8V, and it can be turned on at a low gate voltage. Its on-resistance changes at different gate voltages: 80mΩ at V_GS = 2.5V, 65mΩ at V_GS = 4.5V, and 60mΩ at V_GS = 10V. The maximum drain current (I_D) is -4A, and the Trench process technology is used to ensure low on-resistance and stable performance, suitable for low-voltage switching applications and current control circuits.
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Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
SOT23-3 |
Single-P |
-20V |
12(±V) |
-0.8V |
-4A |
80mΩ |
|
60mΩ |
|
TSM2301ACX RF-VB MOSFET Detailed parameter description
- **Package type (Package)**: SOT23-3
- **Configuration (Configuration)**: Unipolar P-Channel
- **Maximum drain-source voltage (V_DS)**: -20V
- **Maximum gate-source voltage (V_GS)**: ±12V
- **Turning point voltage threshold (V_th)**: -0.8V
- **On-resistance (R_DS(on))**:
- 80mΩ (at V_GS=2.5V)
- 65mΩ (at V_GS=4.5V)
- 60mΩ (at V_GS=10V)
- **Maximum drain current (I_D)**: -4A
- **Process technology**: Trench
- **Maximum power dissipation (P_D)**: Not provided
- **Operating temperature range**: Not provided
Domain and module applications:
TSM2301ACX RF-VB MOSFET Application Fields and Module Examples
1. **Low Voltage Power Management**
TSM2301ACX RF-VB is suitable for low voltage power management circuits, such as DC-DC converters, power switches, and battery management systems (BMS). Its maximum drain-source voltage is -20V, which can efficiently switch current under low voltage conditions. At the same time, its low on-resistance (R_DS(on)) ensures low power loss, which is suitable for applications that require efficient power conversion and stable current control.
2. **Load Switching**
In circuits that require precise load control, TSM2301ACX RF-VB can be used as a switching element to control the on and off of the load. Due to its P-Channel configuration, it can be directly used as a switch at the low voltage power supply end, and can start and shut down the load at a low gate voltage. It is widely used in load switching, start-stop control and other circuits.
3. **Overcurrent Protection**
The low on-resistance of TSM2301ACX RF-VB makes it produce less power consumption when current flows through it, which is suitable for overcurrent protection circuits. In the circuit, if the current exceeds the set value, the MOSFET will quickly turn off to protect the circuit from damage. This function is essential for applications such as power protection and short-circuit protection.
4. **Analog Switches & Signal Conditioning**
TSM2301ACX RF-VB can be used in signal conditioning and analog switch circuits. As a P-Channel MOSFET, it can control the transmission of analog signals and is widely used in signal switching and processing in audio equipment, RF circuits and other analog systems. Its low on-resistance and efficient control capabilities make it excellent in signal conditioning applications.
5. **Battery Switching & Power Switching**
In battery-powered devices, the TSM2301ACX RF-VB can be used as a battery switch to control the power connection between the battery and the device. Its P-Channel configuration is suitable for efficient switching between the load and the battery end, ensuring the safe use of the battery. It is suitable for portable devices, wireless power management, and other applications that require precise battery switch control.
6. **LED Drivers**
The TSM2301ACX RF-VB is suitable for LED driver circuits, especially current switching under low voltage conditions. Due to its efficient conduction performance, it can effectively control current and improve energy efficiency in LED driver circuits. Its low on-resistance reduces heat generation, ensuring the stability and long life of LED lighting systems.
7. **RF Switching**
TSM2301ACX RF-VB is suitable for RF switching applications and can be used as an efficient switching element in wireless communication equipment. It can control the path of RF signals to achieve functions such as signal selection and signal conditioning. Its high efficiency conduction and low on-resistance make it ideal in RF switching applications, ensuring low power consumption and stable operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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