Product introduction：
1. **Product Introduction - TSM20N50CZ-VB**
TSM20N50CZ-VB is a unipolar N-channel MOSFET in TO220 package, suitable for high voltage and high current power electronics applications. Its drain-to-source voltage (V_DS) is 650V and gate drive voltage (V_GS) is ±30V, capable of handling higher voltage and current loads. The on-resistance (R_DS(ON)) of this MOSFET is 160mΩ (at V_GS = 10V) and the maximum drain current (I_D) is 20A, which can meet a variety of high-efficiency power conversion needs. TSM20N50CZ-VB adopts SJ_Multi-EPI technology (multi-layer EPI technology), which effectively reduces on-resistance and switching loss, and is suitable for various applications such as power management, power conversion, industrial control, etc. The high withstand voltage performance and low on-resistance of this MOSFET make it excel in high current and high efficiency applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
20A |
|
|
160mΩ |
SJ_Multi-EPI |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
20A |
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
20A |
|
SJ_Multi-EPI |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
2. **Detailed parameter description**
- **Model**: TSM20N50CZ-VB
- **Package**: TO220
- **Configuration**: Single-N-Channel
- **Drain to Source Voltage(V_DS)**: 650V
- **Gate Drive Voltage(V_GS)**: ±30V
- **Threshold Voltage(V_th)**: 3.5V
- **On-resistance(R_DS(ON))**:
- 160mΩ @ V_GS = 10V
- **Maximum Drain Current(I_D)**: 20A
- **Maximum Power Dissipation**: 75W (calculated based on thermal resistance and operating conditions)
- **Technology Type**: SJ_Multi-EPI technology
- **Switching Characteristics**:
- Turn-on delay time: 50ns
- Turn-off delay time: 80ns
- Reverse recovery time: 200ns
- **Maximum gate-source voltage (V_GS_max)**: ±30V
- **Maximum drain-source current (I_D_max)**: 20A
- **Gate charge (Qg)**: 40nC (typical)
- **Junction temperature range**: -55°C to +150°C
- **Thermal resistance (RthJC)**: 2.5°C/W (typical)
Domain and module applications：
3. **Applications and Module Examples**
- **Switching Power Supplies**
The high withstand voltage (650V) and low on-resistance of the TSM20N50CZ-VB make it ideal for switching power supply designs, especially in applications that require medium and high voltage operation. It can be used in AC-DC power converters, DC-DC converters, LED drivers, and uninterruptible power supply (UPS) systems. In these applications, the TSM20N50CZ-VB provides higher conversion efficiency, lower power loss, and more reliable performance.
- **Battery Management Systems**
This MOSFET is suitable for battery management systems (BMS), especially for charge and discharge control of high-voltage battery packs. The TSM20N50CZ-VB can support large currents and provide efficient battery management to ensure fast and safe charging and discharging in electric vehicles (EVs) and energy storage systems. Its high withstand voltage characteristics enable it to adapt to high-voltage battery environments, further improving system safety and battery life.
- **Power Factor Correction (PFC)**
In the power factor correction (PFC) circuit, TSM20N50CZ-VB, as a high-efficiency switching component, can help improve the power factor of the power system and reduce energy loss. It is commonly used in power adapters, inverters, and high-efficiency power supply equipment to ensure system stability and efficient operation. Due to its low on-resistance, it can significantly reduce the switching loss and heat loss of the system.
- **Industrial Power Modules**
TSM20N50CZ-VB can be used in a variety of industrial power modules, including power conversion, load regulation, and power equipment control. It can maintain reliable working performance in high current and high voltage environments, and is very suitable for industrial automation, electrical control systems, and high-power power transmission and distribution systems.
- **Renewable Energy Systems**
In solar and wind inverters, the TSM20N50CZ-VB provides efficient power conversion, especially for the conversion of high-voltage DC power. It can effectively convert DC power from solar cells or wind turbines into AC power and input it into the grid. In this process, the MOSFET can ensure high efficiency and stability, reduce energy losses, and improve the overall performance of renewable energy systems.
- **Electric Vehicles**
The TSM20N50CZ-VB can serve as a key component in the battery management system (BMS) and motor drive system in electric vehicles such as electric cars and electric motorcycles. It provides efficient power conversion and load management in electric vehicles to ensure the efficiency and stability of the power system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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