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TSM190N08CZC0-VB Product details

Product introduction:

1. Product Introduction:
**TSM190N08CZC0-VB** is a high-performance **single N-channel MOSFET** in **TO220 package**, designed for high current and high efficiency applications. This MOSFET has **80V withstand voltage** (VDS) and supports **±20V gate-source voltage** (VGS), making it suitable for a variety of power supply and drive system requirements. Its **gate threshold voltage (Vth)** is 3V, which is suitable for low gate drive applications and ensures low switching losses. The on-resistance (RDS(ON)) is only 3mΩ at VGS=10V, showing very low conduction losses, suitable for high power applications requiring high efficiency. This MOSFET has a **maximum drain current (ID)** of 195A, which is very suitable for high current load applications. Using **Trench technology**, lower switching losses and high efficiency are ensured, and it is particularly suitable for use in applications requiring fast switching and low energy losses, such as high-efficiency power supplies, power amplifiers, and motor drive systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 80V 3V 195A 3mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 80V 3V 195A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 80V 3V 195A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
2. Detailed parameter description:
- **Model**: TSM190N08CZC0-VB
- **Package type**: TO220
- **Configuration**: Single-N-Channel
- **Withstand voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 3.6mΩ@VGS=4.5V
- 3mΩ@VGS=10V
- **Maximum drain current (ID)**: 195A
- **Technology type**: Trench technology
- **Maximum power dissipation (Pd)**: Calculated according to the specific heat dissipation conditions and working environment
- **Maximum gate charge (Qg)**: Lower gate charge helps increase switching frequency
- **Operating temperature range**: Typically -55°C to +150°C (depending on manufacturer)

Domain and module applications:

3. Application fields and module examples:
**TSM190N08CZC0-VB** has low on-resistance and high current carrying capacity, suitable for a variety of high-power and high-efficiency applications. The following are several typical application fields:

- **High-efficiency power management and DC-DC converters**:
Due to its low RDS(ON) and high current carrying capacity, TSM190N08CZC0-VB is very suitable for **DC-DC converters**, **high-efficiency power management systems**, such as **industrial power supplies, UPS systems**, **computer power adapters**, etc. It can effectively reduce power loss and improve the overall efficiency of the system, especially suitable for high-current and high-efficiency power modules.

- **Power tools and power equipment**:
This MOSFET can be widely used in **power tools**, **electric vehicles** and other high-power power equipment. Its high drain current carrying capacity of 195A makes it suitable for equipment that needs to work efficiently for a long time, such as electric drills, electric scooters, electric bicycles, etc., to ensure that they operate efficiently under high loads and reduce heat generation.

- **Battery Management System (BMS)**:
In the **Battery Management System**, TSM190N08CZC0-VB can be used as a key power switching component to efficiently control the battery charging and discharging process. Due to its low on-resistance and high current carrying capacity, it is suitable for **Electric Vehicle Battery Management System (BMS)**, **Energy Storage System** and other fields, providing stable and efficient current control during battery charging and discharging.

- **Motor Drive System**:
In the **Motor Drive System**, the low on-resistance and high current handling capability of TSM190N08CZC0-VB make it an ideal choice for **Industrial Motor Drive, Home Appliance Motor Control System** and other fields. For example, it can be used to control **Fans, electric pumps, and motors in automated production lines** to achieve efficient drive and reduce energy loss and heat generation.

- **Solar Inverter**:
This MOSFET is particularly suitable for use in **Solar Inverter**, which can efficiently convert DC to AC. Due to its low RDS(ON) and high current capability, it can be used in medium to high power **Photovoltaic Power Generation Systems**, providing high efficiency and stable power conversion, especially suitable for home and commercial solar power generation systems.

- **High Efficiency Power Amplifier and RF Applications**:
In radio frequency (RF) and high efficiency power amplifier (PA), TSM190N08CZC0-VB can be used as a switching element for applications such as **wireless communication equipment, base stations, radar systems**. Its low switching loss and high current carrying capacity help improve the operating efficiency of the equipment, especially in high frequency switching and high power signal processing applications.

**Summary**: TSM190N08CZC0-VB is suitable for multiple systems that require high current and high efficiency, especially in applications such as power management, power tools, battery management and motor drives. Its low on-resistance and high current handling capability enable it to significantly improve system efficiency and reliability in these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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