Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
800V |
|
3.5V |
7A |
|
|
850mΩ |
SJ_Multi-EPI |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
800V |
|
3.5V |
7A |
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
800V |
|
3.5V |
7A |
|
SJ_Multi-EPI |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
TSM10N80CZ C0-VB MOSFET parameter description
- **Package**: TO220
- **Configuration**: Single-N-Channel
- **Withstand voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 850mΩ (at VGS=10V)
- **Maximum drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI
Domain and module applications:
TSM10N80CZ C0-VB MOSFET Applicable fields and modules
1. **High-efficiency power management system**:
TSM10N80CZ C0-VB MOSFET performs well in high-voltage power management due to its high withstand voltage (800V) and low on-resistance (RDS(ON)). It is suitable for use in switching power supplies (SMPS), power adapters, and high-power power modules, which can effectively reduce energy loss, improve system efficiency, and enhance stability.
2. **Power tools and home appliances**:
In the power conversion modules of power tools and home appliances, TSM10N80CZ C0-VB MOSFET can provide efficient power switching capabilities, especially in applications that require high withstand voltage and stable switching characteristics. It can support the power requirements of power tools at high loads and ensure long-term stable operation of the system.
3. **Electric Vehicle Charging System**:
As the core power component of electric vehicle chargers, TSM10N80CZ C0-VB can provide efficient voltage conversion and current control. In electric vehicle charging stations and on-board charging modules, the high voltage withstand capability and low on-resistance of MOSFET make it very suitable for high-voltage and high-power power conversion.
4. **LED Drive Circuit**:
In LED lighting applications, TSM10N80CZ C0-VB MOSFET is used to drive high-voltage LED modules. Due to its low on-resistance and high voltage withstand capability, it can reduce power loss during power switching and improve the energy efficiency of LED systems. It is particularly suitable for high-power LED drive circuits that require high efficiency and long life.
5. **Industrial Power Control System**:
TSM10N80CZ C0-VB is also widely used in industrial power control systems, especially in power conversion modules that require high voltage and high reliability. Whether it is used in inverters, frequency converters, or other industrial power equipment, the TSM10N80CZ C0-VB is an ideal choice with its high withstand voltage and good switching performance.
6. **Power Factor Correction (PFC) Circuit**:
In the power factor correction circuit, the low on-resistance and high withstand voltage characteristics of the TSM10N80CZ C0-VB MOSFET make it very suitable for handling high voltage and high current applications, which can effectively improve the power factor of the system and reduce energy waste.
These fields and applications demonstrate the versatility of the TSM10N80CZ C0-VB MOSFET. Its high efficiency and stability make it an ideal choice for high voltage applications, especially in power management, power tools and charging systems. It has a wide range of application prospects.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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