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TSM10N80CI-VB Product details

Product introduction:

Product Introduction

**TSM10N80CI-VB** is a high voltage, unipolar N-type power MOSFET in a TO220 package suitable for a variety of high voltage power electronics applications. With a drain-source voltage (V_DS) of 800V and a maximum drain current (I_D) of 7A, this model is capable of withstanding higher current loads. The TSM10N80CI-VB uses SJ_Multi-EPI technology, which reduces on-resistance (R_DS(ON)) and improves switching efficiency, making it suitable for applications requiring high voltage withstand and high performance. Its lower on-resistance (R_DS(ON) = 850mΩ@V_GS = 10V) enables it to perform well in high-efficiency power conversion and switching operations.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 800V 3.5V 7A 850mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 800V 3.5V 7A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 800V 3.5V 7A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description

- **Package**: TO220
- **Configuration**: Single-N-Channel
- **Drain-source voltage (V_DS)**: 800V
- **Gate-source voltage (V_GS)**: ±30V
- **Turning voltage (V_th)**: 3.5V
- **Channel on-resistance (R_DS(ON))**: 850mΩ@V_GS=10V
- **Maximum leakage current (I_D)**: 7A
- **Technology**: SJ_Multi-EPI (Super Junction Multi-Epitaxial)

Domain and module applications:

Application fields and module examples

1. **Power management and high-efficiency switching power supply (SMPS)**
The high V_DS and low R_DS(ON) of TSM10N80CI-VB make it very suitable for high-efficiency switching power supply (SMPS). In power conversion applications, such as DC-AC inverters or AC-DC converters, this MOSFET can handle higher voltages and currents while ensuring high efficiency. It is widely used in industrial power systems, consumer electronics power supplies, LED driver power supplies and other fields.

2. **Industrial automation and drive circuits**
Because TSM10N80CI-VB has a high V_DS and can withstand high voltage loads, it has very good performance as a switching element in industrial automation, especially in motor control and drive circuits. For example, in a motor drive system, this MOSFET can efficiently control the current to ensure reliable operation of the equipment.

3. **Electric Vehicles (EV) and Charging Stations**
In electric vehicle charging systems, the TSM10N80CI-VB can be used as a switching element for high-voltage systems, especially in battery management and high-power charging equipment, handling high voltages of 800V. It is also suitable for charging stations and electric vehicle power transmission systems, providing efficient power conversion.

4. **Uninterruptible Power Supply (UPS) Systems**
In UPS systems, the TSM10N80CI-VB can be used to provide a stable DC voltage source and can support high power requirements in the system, especially in environments with long-term operation or large voltage fluctuations. High V_DS and low R_DS(ON) enable it to have higher conversion efficiency and lower losses in UPS power supplies.

5. **Solar Inverters**
In the inverter of a solar power generation system, the TSM10N80CI-VB can withstand 800V DC voltage and maintain a low on-resistance during high-voltage conversion, ensuring efficient operation of the system. Its high withstand voltage and low loss characteristics make it ideal for use in solar inverters and other renewable energy equipment.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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