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TSM080N03PQ56-VB Product details

Product introduction:

Product Introduction

**TSM080N03PQ56-VB** is a high-performance single N-channel MOSFET in a DFN8 (5x6) package. The device has low R_DS(on) and high current carrying capacity, suitable for applications with strict requirements for low voltage drive and high efficiency. Its operating voltage (VDS) is 30V, and it has excellent switching performance, especially maintaining a stable R_DS(on) at low V_GS, making it perform well in low-power devices. This MOSFET uses **Trench technology**, which effectively reduces the on-resistance, thereby improving overall efficiency and performance.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 30V 1.7V 80A 7mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 30V 1.7V 80A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 30V 1.7V 80A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
Detailed parameter description

- **Model**: TSM080N03PQ56-VB
- **Package**: DFN8 (5x6)
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ (VGS=4.5V)
- 7mΩ (VGS=10V)
- **Maximum leakage current (ID)**: 80A
- **Technology**: Trench technology

Domain and module applications:

Applications and module examples:

1. **Power management system**:
TSM080N03PQ56-VB is widely used in high-efficiency power management, especially for low-voltage DC-DC converters, stepper power supplies, inverters, etc. This MOSFET can provide extremely low R_DS(on) at low V_GS, thereby reducing conduction losses and improving system efficiency. Suitable for portable devices, embedded power supplies and other power-sensitive power modules.

2. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**:
In the battery management system (BMS) of electric vehicles, TSM080N03PQ56-VB can effectively handle high-current switching requirements and is suitable for high-efficiency battery charging and discharging processes. In the inverter, drive circuit and charging management system of electric vehicles, this MOSFET can also provide better control and stability, reduce heat generation and improve energy efficiency.

3. **Industrial Automation**:
TSM080N03PQ56-VB can be used for high current switching in industrial equipment, such as motor drives, inverters, and automation control systems, to ensure stable current transmission and improve the overall efficiency of the system. Especially in power tools, robots, and automation devices, energy efficiency and reliability are crucial.

4. **Consumer Electronics**:
Due to its low on-resistance and high current capability, TSM080N03PQ56-VB is widely used in various consumer electronic products, such as smartphones, tablets, and laptops. Its excellent switching characteristics help to increase battery life, reduce system energy consumption, and enhance the overall user experience.

5. **LED Drive Circuit**:
In the LED drive power supply, TSM080N03PQ56-VB can effectively handle high-frequency switching and adapt to different current load requirements, while ensuring a low on-resistance, ensuring high-efficiency driving of LEDs and reducing power loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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