Product introduction:
Product Introduction
**TPCF8103-VB** is a **P-Channel MOSFET**, which adopts **DFN8(3X2)-B** package and is designed for low voltage and high-efficiency applications. It has **VDS (maximum drain-source voltage) of -30V**, **VGS (gate-source voltage) of ±20V**, **Vth (threshold voltage) of -1.5V**, which is suitable for applications requiring negative voltage control. The on-resistance (**RDS(ON)**) of this MOSFET is very low. When **VGS=10V**, the on-resistance is **30mΩ**, which ensures efficient current transmission and is suitable for efficient power management, load switching and low-power systems.
Using **Trench technology**, **TPCF8103-VB** provides low switching losses and excellent conductivity, which is suitable for high-frequency, high-efficiency applications and can operate stably under higher loads. Its **DFN8(3X2)-B** package design is compact and suitable for space-constrained designs. It also has good heat dissipation capabilities and can support higher currents (**ID: -5.1A**). It is an ideal choice for negative current control circuits, especially for power management applications such as high-efficiency power supplies and load switches.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X2)-B |
Single-P |
-30V |
|
-1.5V |
-5.1A |
|
|
30mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(3X2)-B |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| DFN8(3X2)-B |
Single-P |
-30V |
|
-1.5V |
-5.1A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| DFN8(3X2)-B |
Single-P |
-30V |
|
-1.5V |
-5.1A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(3X2)-B |
Single-P |
|
|
|
|
|
|
|
Detailed parameter description
- **Package type**: DFN8(3X2)-B
- **Configuration**: Single channel** P-Channel MOSFET**
- **Maximum drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.5V
- **On-resistance (RDS(ON))**:
- **At VGS=4.5V**: 42mΩ
- **At VGS=10V**: 30mΩ
- **Maximum drain current (ID)**: -5.1A
- **Technology type**: Trench
- **Maximum power loss**: Depends on operating conditions
- **Operating temperature range**: -55°C to +150°C
- **Gate-source current limit**: **±20mA**
- **Maximum junction temperature**: **150°C**
- **Junction temperature**: **150°C**
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Domain and module applications:
Application fields and module examples
1. **Power Management Systems**
**TPCF8103-VB**'s low on-resistance and good current control characteristics make it very suitable for **high-efficiency power management systems**, especially in scenarios where negative current control is required. For example, in **battery management systems**, it can optimize the battery charging and discharging process, reduce battery overheating and loss, and improve system efficiency. This MOSFET can also effectively reduce power loss and improve energy efficiency in **DC-DC converters**.
2. **Load Switches**
As a load switch, **TPCF8103-VB** can provide efficient current switching control in power systems. Its low on-resistance and high reliability make it suitable for **load switch** applications, especially in low-voltage control systems, such as **switching power supplies** (SMPS) or **battery-driven devices**, which can accurately control the switching state of the load to ensure the safety and efficiency of the equipment.
3. **Synchronous Rectification**
In the synchronous rectification applications of **AC-DC converters** and **DC-DC converters**, **TPCF8103-VB** can be used as a low-side switch, which can effectively improve efficiency and reduce power loss. Especially in **switching power supplies** and **LED driver power supplies**, using this MOSFET as a rectification element helps to improve rectification efficiency and reduce system heat generation.
4. **Electric Vehicles**
In **electric vehicles** (such as **electric scooters, self-driving electric cars, and smart electric vehicles**), **TPCF8103-VB** can be used in **battery management systems** and **electric drive systems**. Due to its high current carrying capacity and low on-resistance, it can help optimize battery charging and discharging efficiency while providing reliable switching control in motor drive circuits.
5. **Portable Power Supplies**
In **portable power devices**, especially in **power tools, battery packs, solar charging devices**, **TPCF8103-VB** provides higher system efficiency through its low on-resistance and high current handling capability. It can effectively control the current flow between the power supply and the load, improving the device's operating time and efficiency, especially in limited space.
6. **Smart Home Devices**
**TPCF8103-VB** is also widely used in **smart home power management systems**, such as **smart sockets, smart lighting controls, home appliance power modules**, etc. In these systems, this MOSFET as a power switch can accurately control the device switching, ensure energy efficiency, and extend the product's service life. Due to its small package design, it is very suitable for space-constrained smart devices.
7. **Automotive Electronics**
**TPCF8103-VB** is also widely used in **automotive electronic systems**, especially in battery management and power control modules of **electric vehicles** and **hybrid vehicles**. Its low on-resistance and high current carrying capacity enable it to effectively control the battery charging and discharging process, optimize battery life, and ensure the stability of the system under different working conditions.
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* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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