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TPC8048-H-VB Product details

Product introduction:

1. **Product Introduction**

TPC8048-H-VB is a high-efficiency single N-channel MOSFET in SOP8 package with excellent current control capability. The drain-source voltage (VDS) of this MOSFET is 60V, the gate-source voltage (VGS) is ±20V, and the threshold voltage (Vth) is 3V. Its on-resistance (RDS(ON)) is 6mΩ (VGS=4.5V) and 5mΩ (VGS=10V) at different gate voltages, providing extremely low conduction loss and high-efficiency current conduction capability. The maximum drain current (ID) of TPC8048-H-VB can reach 16A, and the Trench technology is used to effectively reduce switching losses and increase switching speed. It is widely used in applications that require efficient current management, such as high power conversion, DC-DC converters, and load switches.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-N 60V 3V 16A 5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Single-N 60V 3V 16A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Single-N 60V 3V 16A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-N
2. **Detailed parameter description**

- **Package type**: SOP8
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 16A
- **Technology**: Trench technology
- **Maximum power loss (Ptot)**: 2.5W
- **Operating temperature range**: -55°C to +150°C

Domain and module applications:

3. **Application fields and module examples**

TPC8048-H-VB is suitable for multiple high-efficiency power management and power conversion systems due to its low on-resistance, high current carrying capacity and efficient switching performance. The following are typical application fields and module examples of this MOSFET:

# **1. Battery Management System (BMS)**

TPC8048-H-VB is suitable for battery management systems (BMS), especially in electric vehicles and renewable energy systems. This MOSFET has low RDS(ON), can respond quickly and maintain efficient current conduction during charging and discharging, reduce power loss, and thus improve the overall energy efficiency of the system.

- **Typical applications**: Battery management system (BMS) for electric vehicles, solar energy storage systems, UPS power supplies, and battery management for mobile devices.

# **6. Smart switches and electronic load switches**

TPC8048-H-VB is widely used in various smart switches and electronic load switches, especially in low-voltage, high-current load control applications. Its low on-resistance and high current capability enable it to respond quickly to load changes and maintain efficient current conduction.

- **Typical applications**: smart home power control, power management of portable devices, automotive battery management systems.

# **7. Automotive electronics**

TPC8048-H-VB is suitable for automotive electronics, especially in electric vehicles (EV) and hybrid electric vehicles (HEV). Its low power loss and high current capability enable it to effectively manage the battery charging and discharging process, improve the efficiency of the battery management system, and reduce energy loss.

- **Typical applications**: electric vehicle battery management system, on-board power system, automotive charging module, on-board DC-DC converter.

Summary

TPC8048-H-VB is a high-efficiency, low on-resistance N-channel MOSFET suitable for battery management, DC-DC converters, load switches, LED drive circuits, power protection, smart switches and other fields. Its low RDS(ON) characteristics and high current capability make it an ideal choice for efficient current management and power conversion applications, especially in situations requiring low power consumption, high efficiency and high current carrying, and has great application potential.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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