Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
SOT23-3 |
Single-N |
60V |
20(±V) |
1.7V |
0.3A |
|
|
2800mΩ |
|
TN2106K-VB MOSFET detailed parameter description
- **Package**: SOT23-3
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- **3100mΩ** (at **VGS=4.5V**)
- **2800mΩ** (at **VGS=10V**)
- **Maximum drain current (ID)**: 0.3A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Power loss**: Low RDS(ON) value helps reduce power loss and improve overall efficiency.
- **Switching characteristics**: Optimized switching speed, suitable for high-efficiency and low-power applications.
Domain and module applications:
TN2106K-VB MOSFET Application Examples
1. **Low-power battery-powered devices**:
**TN2106K-VB** is particularly suitable for **battery-powered electronic devices**, such as **wireless sensors**, **portable medical devices**, etc., due to its low power consumption characteristics. In these devices, MOSFETs are used as switching elements to achieve power management and extend battery life. Low **RDS(ON)** values help reduce battery energy consumption and improve the overall efficiency of the device.
2. **Small power management module**:
Due to its small **SOT23-3** package and low power consumption characteristics, **TN2106K-VB** is very suitable for **power management modules**, especially in **DC-DC converter** and **load switch control** circuits. Its low on-resistance can effectively reduce power loss and is suitable for **low voltage power regulation** and **power stability control** applications.
3. **Overcurrent protection circuit**:
In some **overcurrent protection circuit**, **TN2106K-VB** can be used as a switching element to monitor the current and effectively limit the current value to prevent other components in the circuit from being damaged. The low on-resistance and small package of this MOSFET make it very suitable for implementing overcurrent protection functions in space-constrained circuits.
4. **RF/high-frequency switching circuit**:
**TN2106K-VB** uses **Trench technology**, so it performs well in high-frequency switching applications. It can be used for **RF switching** or **high-frequency signal processing circuit**, which can effectively control the opening and closing of the signal path. It is widely used in **wireless communication equipment**, **RF front-end modules** and other fields.
5. **Driving low-power loads**:
This MOSFET can also be used to drive **low-power loads**, such as **LED drive circuits** and **low-power motors**. Its low power loss when switching loads helps improve system efficiency and extend equipment life. Suitable for circuits that require high efficiency and low load power.
6. **Smart home devices**:
In **smart home devices**, **TN2106K-VB** can be used to implement low-power power management, such as **sensors**, **wireless switches**, **automatic control systems**. Its small package and efficient switching characteristics enable it to perform well under conditions of limited space and power consumption.
7. **Sensor switching circuit**:
For some small **sensor modules**, such as temperature, humidity, pressure and other sensors, **TN2106K-VB** can be used as a switching element to help achieve efficient control of the sensor power supply, especially in applications with strict power consumption requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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