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TM3401N FN-VB Product details

Product introduction:

Product Introduction

**TM3401N FN-VB** is a **P-type unipolar field effect transistor (MOSFET)**, which adopts **SOT23-3** package and is designed for low-voltage, high-efficiency switching applications. It has a maximum drain-source voltage (**VDS**) of **-30V** and a maximum drain current (**ID**) of **-5.6A**, which is suitable for load control, switching power supply, battery management and electric drive. The on-resistance (**RDS(ON)**) of this MOSFET is **46mΩ** at **VGS=10V**, with low switching loss and efficient current control performance. Using **Trench** technology, it provides excellent switching characteristics and thermal performance, and is very suitable for use in various low-voltage, high-frequency circuits.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-P -30V 20(±V) -1.7V -5.6A 46mΩ
Detailed parameter description

- **Package type**: SOT23-3
- **Configuration**: Unipolar P type
- **Maximum drain-source voltage (VDS)**: **-30V**
- **Gate-source voltage (VGS)**: **±20V**
- **Threshold voltage (Vth)**: **-1.7V**
- **On-resistance (RDS(ON))**:
- **54mΩ** (at **VGS=4.5V**)
- **46mΩ** (at **VGS=10V**)
- **Maximum drain current (ID)**: **-5.6A**
- **Technology type**: Trench
- **Operating temperature range**: -55°C to +150°C
- **Maximum power loss**: Calculated according to specific operating conditions
- **Maximum drain-source current**: **-5.6A**

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Domain and module applications:

Application fields and module examples

1. **Battery Management Systems (BMS)**
**TM3401N FN-VB** is a **P-type MOSFET**, which is commonly used for **battery protection** and **battery charge and discharge management** in **battery management systems**. Due to its low **RDS(ON)** value, this MOSFET can work efficiently under high current loads and reduce power losses. During the battery charge and discharge process, it can effectively control the battery discharge current, prevent the battery from over-discharge or over-charge, and protect the battery from damage. It is widely used in **portable electronic devices**, **power tools** and **electric vehicles**.

2. **Low Voltage Power Switching**
This MOSFET is particularly suitable for **low voltage power switching applications**, such as **low power DC-DC converters**, **load switches** and **power management modules**. Its low on-resistance and efficient switching characteristics enable it to work efficiently at high frequencies and reduce power losses in power systems. In **communication equipment**, **consumer electronics** and **portable power systems**, stable current control is provided to ensure the reliability and efficiency of the power system.

3. **Load Switching and Overcurrent Protection**
**TM3401N FN-VB** can be applied to various **load switching** and **overcurrent protection circuits**. Its low on-resistance and good **VDS** specifications enable it to maintain low power loss when the load current changes, suitable for modules such as **motor drive**, **LED lighting control** and **smart home appliances**. In applications that require fast switching and low power consumption, efficient load control is provided.

4. **Inverters and Electric Drive Systems**
In **inverters** and **electric drive systems**, **TM3401N FN-VB** can be used as a switching element to regulate current and control the speed of the motor. Due to its **low on-resistance** and **high current handling capability**, it can provide stable power output in **motor drives**, **wind power generation systems** and **power tools**, ensuring efficient operation of the system.

5. **Relay Control Circuits**
This MOSFET can be used in **relay control circuits** to drive high-power loads. Due to its efficient switching capability, it can quickly respond to control signals and realize load switching, and is widely used in **automation control systems** and **smart homes**. By working with a microcontroller (MCU), it can achieve precise control of high-power devices.

6. **Analog Signal Switching**
**TM3401N FN-VB** can also be used as an **analog signal switch** for applications such as **audio amplifier circuits** or **video signal transmission**. Due to its low on-resistance and high linearity characteristics, this MOSFET can effectively reduce signal distortion and provide high-quality signal transmission when processing analog signals.

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**TM3401N FN-VB**'s low on-resistance and high current carrying capacity make it widely used in **battery management, low voltage power switch, load switch, electric drive system, relay control circuit, analog signal switch and other fields**. Especially in systems that require high efficiency and low power consumption, it can provide excellent performance to meet various design requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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