Product introduction：
TK56E12N1-VB MOSFET Product Introduction
**TK56E12N1-VB** is a high-performance **unipolar N-channel** MOSFET in **TO220** package, designed for high-efficiency power management. Its maximum drain-source voltage (VDS) is **100V**, which is suitable for switch control in the medium voltage range, especially for power conversion, drive circuits and battery management. The threshold voltage (Vth) of this MOSFET is **3V**, which supports low-voltage drive and can start at a lower gate-source voltage. The **RDS(ON)** of the MOSFET is **5mΩ** (at **VGS=10V**), and its extremely low on-resistance minimizes current loss during operation and improves overall efficiency. In addition, the high drain current capability of **ID** of **120A** makes it suitable for high-power applications. The device adopts **Trench** technology, which can provide excellent performance and stability in high-current applications, ensuring higher power transmission efficiency.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
100V |
|
3V |
120A |
|
|
5mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
100V |
|
3V |
120A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
100V |
|
3V |
120A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
TK56E12N1-VB MOSFET Detailed parameter description
- **Package**: TO220
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 5mΩ (VGS=10V)
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Switching characteristics**: Excellent high-efficiency switching performance, suitable for fast switching operation
- **Power loss**: Very low on-resistance makes it have extremely low power loss in the on state
- **Thermal management**: Good thermal conductivity, suitable for high current working environment
- **Current carrying capability**: supports drain current up to **120A**, suitable for high power load applications
Domain and module applications：
TK56E12N1-VB MOSFET Application Examples
1. **Power Management System**: With its **5mΩ** low on-resistance and **120A** high current capability, the TK56E12N1-VB is particularly suitable for high-efficiency power management systems such as DC-DC converters, AC-DC adapters, and power modules. Its low loss characteristics can effectively reduce energy loss during power conversion and improve system efficiency, especially under high power loads.
2. **Power Tools and Battery-Driven Equipment**: In power tools, electric bicycles, and other battery-driven equipment, the TK56E12N1-VB provides high current carrying capacity and high-efficiency switching capabilities. The MOSFET can support high current flow during battery charging and discharging, ensuring the stability and efficient operation of the battery management system. It is particularly suitable for applications that require high current control and fast switching.
3. **Inverters and Solar Systems**: The TK56E12N1-VB is ideally suited for use in solar inverters, wind power inverters, and other high voltage power conversion systems due to its **100V** maximum drain-source voltage and **low on-resistance**. In these applications, MOSFETs are able to effectively manage high current loads during energy conversion, reduce power losses, and improve conversion efficiency.
4. **Electric Vehicle Charging Systems**: In electric vehicle (EV) charging systems, the TK56E12N1-VB acts as a power switch, taking on the task of efficient current transmission. With its **120A** high drain current capability, it can handle high current loads during EV charging, while its low on-resistance reduces current loss and heat generation, improving charging efficiency and system stability.
5. **Industrial Power Control**: The TK56E12N1-VB is also well suited for use in industrial automation, robotic control, and other power control systems with high current demands. Whether driving high-power motors or used in industrial power conversion, this MOSFET can provide stable current transmission and ensure efficient operation and long-term stability of the system.
6. **LED driver**: Due to its low on-resistance and high current carrying capacity, TK56E12N1-VB is also suitable for LED driver, especially in large-scale lighting systems and high-power LED applications. MOSFET can ensure efficient driving of LED systems and extend their service life, suitable for indoor and outdoor lighting as well as commercial lighting facilities.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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