Product introduction：
1. **T2606L-VB Product Introduction:**
T2606L-VB is a single N-channel MOSFET in TO220 package with a drain-source voltage (VDS) of up to 60V and a gate-source voltage (VGS) of ±20V. This model has a very low on-resistance (RDS(ON) = 5mΩ@VGS = 10V), which can provide extremely low power loss and efficient switching performance. Its threshold voltage (Vth) is 3V and the maximum drain current (ID) is 120A, which is suitable for high-current, high-efficiency power conversion applications. T2606L-VB uses Trench technology, has excellent thermal performance and low on-resistance, can withstand higher current density, and performs well in various fields with high efficiency requirements.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
60V |
|
3V |
120A |
|
|
5mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
60V |
|
3V |
120A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
60V |
|
3V |
120A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
2. **T2606L-VB Detailed Parameters:**
- **Package Type:** TO220
- **Configuration:** Single N-channel MOSFET
- **Drain-Source Voltage (VDS):** 60V
- **Gate-Source Voltage (VGS):** ±20V
- **Threshold Voltage (Vth):** 3V
- **On-Resistance (RDS(ON)):** 5mΩ@VGS = 10V
- **Maximum Drain Current (ID):** 120A
- **Technology:** Trench Technology
- **Power Loss:** Depends on operating conditions, losses can usually be reduced by reducing on-resistance
- **Operating Temperature Range:** -55°C to +150°C
- **Maximum Power Dissipation (Ptot):** Typically around 100W, depending on operating conditions and heat dissipation configuration
- **Thermal Resistance (RthJC):** Depending on the specific heat dissipation conditions, it is usually 1~2°C/W (source to junction)
Domain and module applications：
3. **T2606L-VB Application Fields and Modules: **
# **1. High-efficiency power conversion: **
The extremely low on-resistance of T2606L-VB makes it very suitable for high-efficiency power conversion systems, especially in switch mode power supplies (SMPS). Its maximum leakage current is 120A, which can provide efficient current transmission, reduce energy loss and improve conversion efficiency. It is widely used in high-efficiency energy conversion modules such as power adapters, DC-DC converters, inverters and battery chargers.
# **6. Power Electronic Systems: **
T2606L-VB is widely used in various power electronic systems, especially in situations requiring high efficiency and low conduction losses. Due to its low RDS(ON) and high current capability, it is suitable for power dispatching systems, transmission power modules and grid interface devices. This MOSFET can ensure the stability and efficiency of power transmission and meet the high-demand power electronic applications.
Summary:
T2606L-VB has excellent performance in many fields such as high-efficiency power conversion, power tools, home appliances, electric vehicles, renewable energy, industrial power management, etc. with its high voltage tolerance of 60V, extremely low on-resistance (5mΩ@VGS=10V) and high current carrying capacity of 120A. The design using Trench technology enables this MOSFET to provide excellent thermal performance and low energy loss, suitable for various applications of high-efficiency energy transmission and high-power conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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