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T20S60-VB Product details

Product introduction:

1. **T20S60-VB Product Introduction: **

T20S60-VB is a single N-channel MOSFET in TO220 package with a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, suitable for high-voltage switching applications. Its threshold voltage (Vth) is 3.5V, on-resistance (RDS(ON)) is 160mΩ@VGS = 10V, maximum drain current (ID) is 20A, and SJ_Multi-EPI technology is used. This MOSFET has excellent switching characteristics and low power consumption, and is suitable for high-efficiency power conversion, industrial power management and electric vehicles.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 650V 3.5V 20A 160mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
2. **T20S60-VB Detailed Parameters:**

- **Package Type:** TO220
- **Configuration:** Single N-Channel MOSFET
- **Drain-Source Voltage (VDS):** 650V
- **Gate-Source Voltage (VGS):** ±30V
- **Threshold Voltage (Vth):** 3.5V
- **On-Resistance (RDS(ON)):** 160mΩ@VGS = 10V
- **Maximum Drain Current (ID):** 20A
- **Technology:** SJ_Multi-EPI (Super Junction Multi-EPI Technology)
- **Power Loss:** Calculated according to the working conditions of the specific application
- **Operating Temperature Range:** -55°C to +150°C (usually depends on the application environment and heat dissipation conditions)
- **Maximum Power Dissipation (Ptot):** This value will vary depending on operating temperature, load conditions and cooling solutions.

Domain and module applications:

3. **T20S60-VB Applications and Modules: **

# **1. Efficient Power Conversion: **
The 650V high withstand voltage capability of the T20S60-VB makes it very suitable for high-efficiency power conversion applications, especially in switching power supplies (SMPS). Its low on-resistance (RDS(ON)) can reduce power loss and improve system efficiency when high-voltage current is transmitted. Common applications include power adapters, chargers, UPS power supplies, and industrial power modules.

# **6. Automotive Electronic Systems: **
The high withstand voltage characteristics and good thermal management performance of this MOSFET make it very suitable for automotive electronic systems, especially in battery management systems for electric and hybrid vehicles. It can be used in inverters, battery charging modules, battery balancing systems, etc., to support the development of automotive electrification and efficient battery charge and discharge management.

Summary:
T20S60-VB has a high voltage tolerance of 650V, a low on-resistance of 160mΩ and a high current carrying capacity of 20A. It uses SJ_Multi-EPI technology, which makes it perform well in high-efficiency power conversion, power tools, electric vehicles, renewable energy systems and industrial applications. It is widely used in various fields that require high voltage, high current and high-efficiency energy conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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