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T1404L-VB Product details

Product introduction:

1. **T1404L-VB Product Introduction**

T1404L-VB is a **40V N-Channel MOSFET**, **TO220 package**, **manufactured with **Trench technology**. This MOSFET is particularly suitable for high-power applications, providing an extremely low **on-resistance (RDS(ON))**, **RDS(ON)** is only **1mΩ** at **VGS = 10V**, making it an excellent performer in high-current and high-frequency applications. Its **maximum drain current (ID)** is **280A**, capable of handling high-power loads, suitable for power conversion, battery management systems, and high-efficiency power management applications.

The high current carrying capacity and low on-resistance characteristics of the T1404L-VB make it widely used in fields such as **electric vehicles**, **UPS (uninterruptible power supply) systems**, **power management modules**, and **high-efficiency power conversion**. Its efficient current switching capability is also particularly suitable for applications requiring high current and low loss, such as **power amplifiers** and **motor drive control**.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 40V 2.5V 280A 1mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 40V 2.5V 280A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 40V 2.5V 280A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
2. **T1404L-VB Detailed Parameters**

- **Package Type**: TO220
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage (VDS)**: 40V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 2.5V
- **On-Resistance (RDS(ON))**:
- **1mΩ @ VGS = 10V**
- **Maximum Drain Current (ID)**: 280A
- **Maximum Power Dissipation**: Maximum **300W** (depending on operating conditions and heat dissipation)
- **Operating Temperature Range**: -55°C to +150°C
- **Switching Speed**: Suitable for high-speed switching applications
- **Technology Type**: Trench
- **Maximum Junction Temperature**: 150°C
- **Reverse Recovery Characteristics**: Very low reverse recovery time for fast switching applications
- **Reverse Leakage Current**: Low reverse leakage current for high efficiency operation

Domain and module applications:

3. **Application fields and module examples of T1404L-VB**

# **High-efficiency power management**
T1404L-VB is suitable for **high-efficiency power management systems**, especially applications that need to handle large currents. Its extremely low on-resistance and high current carrying capacity enable it to reduce power losses during power conversion and improve system efficiency.

**Application example**: In the battery management system (BMS) of **electric vehicles (EVs)**, T1404L-VB can be used as a switching element in a high-efficiency power converter to optimize the battery charging and discharging process, ensuring efficient battery energy utilization and long service life.

# **Wireless communication system**
T1404L-VB's fast switching capability and efficient current conduction capability make it ideal for use in **wireless communication systems**. In these systems, MOSFETs are often used in power amplifiers to optimize signal transmission and reduce power losses.

**Application example**: In **mobile base station equipment**, T1404L-VB can be used in **RF Power Amplifier** to optimize the signal amplification process and improve the signal transmission efficiency and stability.

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Summary

T1404L-VB is a **40V N-Channel MOSFET**, using **TO220 package**, suitable for high current and high frequency applications. Its extremely low on-resistance and high current carrying capacity make it widely used in **power management, power conversion, battery management system, and motor drive control** and other fields. With its excellent switching performance and high efficiency, T1404L-VB is suitable for power control systems that require low power loss and high efficiency conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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