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SW7N60R-1-VB Product details

Product introduction:

**SW7N60R-1-VB MOSFET Product Introduction**

**SW7N60R-1-VB** is an **N-channel power MOSFET** in **TO220 package**, designed for high voltage, high efficiency power conversion and power management applications. With a maximum drain-source voltage (VDS) of 600V and a maximum drain current (ID) of 10A, this product has good performance in power supply design, can handle higher voltage and current, and is suitable for multiple industrial and consumer electronics applications. SW7N60R-1-VB adopts **Plannar** technology, which enables it to have a lower on-resistance (**RDS(ON) = 1000mΩ** @ VGS = 10V) and provide reliable high-voltage switching capabilities. It is widely used in power adapters, motor drives, power tools and inverters.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 600V 3.5V 10A 1000mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 600V 3.5V 10A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 600V 3.5V 10A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
**Detailed parameter description**

- **Package type**: TO220
**TO220** package is a standard power MOSFET package with good heat dissipation performance. It is suitable for high-power power supply and drive systems. It can effectively reduce thermal resistance and ensure the stable operation of MOSFET under high power conditions.

- **Configuration**: Single N-channel
As an **N-channel MOSFET**, it has excellent switching performance and low on-resistance, and is particularly suitable for applications that require efficient switching operations.

- **Maximum drain-source voltage (VDS)**: 600V
**VDS = 600V**, this MOSFET can withstand higher voltages and is suitable for medium and high voltage applications such as power adapters, motor drives and inverters.

- **Maximum gate-source voltage (VGS)**: ±30V
**VGS = ±30V**, the gate voltage range of this MOSFET is wide, which is compatible with a variety of controllers and is suitable for applications such as digital control circuits and drive circuits.

- **Threshold voltage (Vth)**: 3.5V
**Vth = 3.5V**, the lower threshold voltage means that the MOSFET can be turned on at a lower gate-source voltage, providing better switching control characteristics and suitable for low-voltage control circuits.

- **On-resistance (RDS(ON))**:
- **1000mΩ** @ VGS = 10V
At **VGS = 10V**, **RDS(ON) = 1000mΩ**, suitable for power control and power management applications, ensuring low power consumption and high-efficiency power switch operation.

- **Maximum Drain Current (ID)**: 10A
**ID = 10A**, this MOSFET can handle high current loads and is suitable for power management and power conversion applications that require higher currents.

- **Technology**: Plannar
Using **Plannar** technology, this technology can provide good switching performance in high voltage and high current applications, and has lower switching loss and conduction loss, and performs well in high-efficiency power supply design.

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Domain and module applications:

**Application fields and module examples**

1. **Switching power supply (SMPS)**
**SW7N60R-1-VB** is suitable for various **switching power supplies (SMPS)**, such as **AC-DC converter**, **DC-DC converter**, **LED driver**, etc. Its 600V withstand voltage and 10A maximum leakage current can meet the power conversion requirements of high voltage and high current, provide efficient and stable power conversion, and is an ideal choice in high-efficiency power supply design.

2. **Motor drive system**
In **motor drive system**, SW7N60R-1-VB can be widely used in **industrial automation motors**, **power tools** and **home appliance motor control**. Its higher leakage voltage and low on-resistance are suitable for motor drive, starting and speed control, providing efficient and reliable motor control solutions.

3. **Inverter**
This MOSFET is widely used in **inverters** (such as **solar inverters** and **wind inverters**) to convert DC power into AC power. Its 600V withstand voltage and low on-resistance enable it to work efficiently in high-frequency, high-power inverters, reduce energy loss, and is suitable for occasions requiring high-efficiency power conversion.

4. **Battery Management System (BMS)**
**SW7N60R-1-VB** can be used in **Battery Management System (BMS)**, especially in **Electric Vehicles (EVs)** and **Energy Storage Systems**. Its excellent performance in high voltage and high current environments makes it suitable for battery charging and discharging control to ensure the safety and efficient operation of the battery system.

5. **Power Electronics Module**
In **Power Electronics Module**, SW7N60R-1-VB can be used as the core switching element of **power converters, UPS power supplies, AC motor controllers** and other equipment. Its high voltage and high current capabilities make it suitable for use in high-power power supplies and industrial-grade power management systems.

6. **Home Appliance Power Management**
This MOSFET can also be widely used in home appliance power management, such as **air conditioners, microwave ovens, refrigerators, etc.**. The 600V withstand voltage and 10A current capability of SW7N60R-1-VB enable it to cope with the high power requirements in home appliances and provide efficient power conversion and protection.

7. **High Voltage Power Module**
SW7N60R-1-VB is also widely used in **High Voltage Power Module**, especially in industrial power systems that require higher voltage and high power. For example, **communication equipment power module** or **industrial control system power supply**, it can effectively control the flow of high-power current and provide stable power output.

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* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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