Product introduction:
**SW60N04V-VB - Product Introduction**
The SW60N04V-VB is a high-efficiency N-channel MOSFET in a DFN8(5X6) package designed for low-voltage, high-current power switching applications. The maximum drain-to-source voltage (VDS) of this MOSFET is 40V and the maximum gate drive voltage (VGS) is ±20V. Its gate threshold voltage (Vth) is 3V, ensuring startup at low gate voltages and fast switching. The on-resistance (RDS(ON)) of the SW60N04V-VB is very low, only 2mΩ@VGS=10V, making it extremely low power loss and highly efficient in high current (maximum drain current of 120A) applications. Using Trench technology, this MOSFET has low switching losses, fast response and excellent thermal performance, making it particularly suitable for high-efficiency power conversion, DC-DC converters, automotive power supplies and other high-current applications.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
40V |
|
3V |
120A |
|
|
2mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
40V |
|
3V |
120A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
40V |
|
3V |
120A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
**SW60N04V-VB - Detailed Parameter Description**
| Parameters| Description|
|---------------------|------------------------------------------------|
| **Package** | DFN8(5X6) |
| **Configuration** | Single N-Channel MOSFET |
| **VDS** | 40V |
| **VGS** | ±20V |
| **Vth** | 3V |
| **RDS(ON)** | 2mΩ @ VGS=10V |
| **ID** | 120A |
| **Technology** | Trench Technology|
| **Maximum Drain Power Loss** | Depends on the specific application environment, but has low switching and conduction losses|
| **Operating Temperature Range** | -55°C to +150°C (Maximum Junction Temperature) |
| **Switching Characteristics** | High efficiency, low loss, fast switching response, suitable for high frequency applications |
| **Quiescent leakage current** | Very low leakage current, ensuring long-term stable operation |
Domain and module applications:
**SW60N04V-VB - Applications and Module Examples**
1. **DC-DC Converter**
SW60N04V-VB is widely used in DC-DC converters. Due to its very low on-resistance (RDS(ON) = 2mΩ@VGS=10V), it can perform efficient voltage conversion with extremely low conduction losses, and is particularly suitable for low-voltage, high-current power systems. Whether used for step-down conversion (Buck converter) or step-up conversion (Boost converter), this MOSFET can provide stable performance, reduce heat loss, and improve system efficiency.
2. **Battery Management System (BMS)**
SW60N04V-VB is also very suitable for battery management systems (BMS). During the battery charging and discharging process, MOSFET acts as a switching element to control the charging and discharging process of the battery. Its high current carrying capacity (maximum ID 120A) and low on-resistance enable it to reduce power loss during high-efficiency charging, extend battery life, and improve system reliability.
3. **Electric Vehicle (EV) Power System**
In the electric vehicle (EV) power management system, SW60N04V-VB MOSFET is an ideal choice. It can be used in battery management, drive circuits, inverters, or power conversion modules to convert the battery's DC power into the AC power required to drive the motor. Due to its high current and low conduction loss, it can ensure high efficiency of the battery system and extend the battery life.
4. **High-efficiency Power Module**
SW60N04V-VB MOSFET is suitable for high-efficiency power modules, such as high-frequency switching power supplies and high-power density power supplies. Its low on-resistance and fast switching characteristics make it very suitable for devices that require efficient power conversion, such as LED driver power supplies, power amplifiers, etc. This MOSFET can significantly reduce switching losses and conduction losses, and improve overall power conversion efficiency.
5. **Automotive electronics**
SW60N04V-VB also has important applications in automotive electronic systems, especially in electric vehicles and hybrid electric vehicles (HEVs), where it can be used in modules such as power management, inverters, and battery charge management. Its high current carrying capacity and low loss characteristics make it an ideal choice for automotive power modules, helping to improve vehicle energy efficiency and battery performance.
6. **Power amplifier**
In power amplifiers that require large current and efficient conversion (such as wireless communications and broadcasting systems), SW60N04V-VB can ensure fast signal switching and efficient power amplification as a switching element. Its low conduction loss and fast response characteristics make it suitable for high-efficiency radio frequency (RF) amplifier design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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