Product introduction：
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SW417J-VB is a single P-channel MOSFET in a compact SOT23-3 package, suitable for space-constrained applications. The MOSFET has a drain-source voltage (VDS) of -30V, a maximum gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of -1.7V. Its on-resistance (RDS(ON)) is 54mΩ at VGS=4.5V and 46mΩ at VGS=10V, with low conduction losses and efficient power transmission capabilities. The maximum drain current (ID) is -5.6A, suitable for low-power, medium-current switching circuits. SW417J-VB uses Trench technology, with excellent switching performance and low power consumption, and is particularly suitable for high-frequency and low-voltage applications.
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Domain and module applications：
SW417J-VB is widely used in electronic devices that require miniaturized and efficient power switches due to its low on-resistance and small package. It is particularly suitable for use in load switches, low-voltage DC-DC converters, overvoltage protection circuits, and battery management systems. In these applications, MOSFET can effectively control load current while minimizing power loss. In addition, SW417J-VB is also suitable for portable devices, charging systems, battery protection modules, and various low-power circuits. Its compact SOT23-3 package enables it to perform well in size-constrained circuits, providing better space utilization and thermal management capabilities.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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