Product introduction：
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SW35N10V-VB is a high-efficiency single N-channel MOSFET packaged in DFN8 (5x6) package with excellent heat dissipation performance and compact size, suitable for space-constrained applications. The MOSFET has a drain-source voltage (VDS) of 100V, a maximum gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 2.5V. Its on-resistance (RDS(ON)) is 12.36mΩ at VGS=4.5V and 9mΩ at VGS=10V, providing extremely low conduction losses and supporting a maximum drain current (ID) of 65A. SW35N10V-VB uses advanced Trench technology and excels in efficient switching and current handling, making it suitable for a variety of applications requiring high power, high frequency and low loss.
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Domain and module applications：
SW35N10V-VB is very suitable for applications that require efficient power transmission due to its low on-resistance and high current handling capability. For example, it can be widely used in DC-DC converters, battery management systems, automotive electronics, and power modules, where MOSFETs need to withstand higher currents while maintaining low power consumption. Due to its efficient conductive properties, SW35N10V-VB can also be used in modules such as motor drives, switching power supplies (SMPS), and solar inverters. Especially in environments with limited space and high heat dissipation requirements, the DFN8 package provides compactness and excellent thermal management performance. This MOSFET is also suitable for portable devices, power tools, and other high-frequency and low-loss power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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