Product introduction：
**SW3406-VB MOSFET Product Introduction**
**SW3406-VB** is a high-efficiency N-channel MOSFET in a **SOT23-3** package, designed for low-voltage, high-current switching applications. The **VDS (drain-source voltage)** of this MOSFET is **30V** at maximum, making it very suitable for low-voltage power management circuits. Its **RDS(ON)** is **33mΩ** at **VGS=4.5V** and **30mΩ** at **VGS=10V**, with very low on-resistance, thereby reducing power loss and improving efficiency. **Vth (threshold voltage)** is **1.7V**, which is compatible with a variety of logic levels and suitable for a variety of switching applications. This MOSFET uses **Trench** technology to provide high-efficiency switching characteristics and can be widely used in small power supplies that require high efficiency.
File download
Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
30V |
20（±V） |
1.7V |
6.5A |
|
|
30mΩ |
|
**Detailed parameter description**
- **Package**: SOT23-3
SOT23-3 is a small three-pin package that is ideal for low-power and high-density applications and suitable for designs with limited space.
- **Configuration**: Single N-channel
N-channel configuration is the most commonly used MOSFET configuration with lower on-resistance and can provide high-efficiency switching characteristics.
- **VDS (drain-source voltage)**: 30V
The maximum drain-source voltage of this MOSFET is 30V, which is suitable for applications such as low-voltage power management, switching circuits and signal conditioning.
- **VGS (gate-source voltage)**: ±20V
This MOSFET supports gate-source voltages up to ±20V, providing flexible control options for various logic level control.
- **Vth (threshold voltage)**: 1.7V
The threshold voltage of 1.7V ensures that it can be turned on at a lower gate voltage, which is suitable for compatibility with low-voltage logic drive circuits.
- **RDS(ON) (on-resistance)**:
- **33mΩ @ VGS=4.5V**
- **30mΩ @ VGS=10V**
The low on-resistance ensures that the MOSFET can effectively reduce power loss during the switching process and provide high efficiency.
- **ID (maximum continuous leakage current)**: 6.5A
The current carrying capacity of 6.5A is suitable for small and medium power switching applications to meet the current and power requirements.
- **Technology**: Trench
**Trench** technology improves the efficiency and switching performance of MOSFETs, with low on-resistance, high speed and better thermal performance, making it suitable for a variety of high-performance applications.
---
Domain and module applications：
**Application fields and module examples**
1. **Battery Management System (BMS)**
**SW3406-VB** MOSFET is very suitable for battery protection circuits in **Battery Management System**, especially overcharge and over-discharge protection of lithium batteries. Its low threshold voltage (1.7V) and low on-resistance enable it to effectively manage the battery charging and discharging process, improving the efficiency and stability of the system.
2. **DC-DC Converter**
In **DC-DC Converter**, **SW3406-VB** MOSFET can be used as an efficient switching element for boost or buck conversion of power supply. Low on-resistance and high current carrying capacity enable it to minimize power loss during the conversion process and improve overall power efficiency.
3. **Load Switch and Power Management**
This MOSFET is also suitable for **load switch** and **power management system**. For example, in portable devices, communication equipment and consumer electronics, SW3406-VB can be used as a switching element for power switch control. Its high efficiency and compact package make it very suitable for use in space-constrained power management modules.
4. **LED Drive Circuit**
In **LED Drive Circuit**, **SW3406-VB** can be used as an efficient switching element and plays a key role in the constant current drive circuit. Due to its low on-resistance, it can significantly reduce energy loss, extend battery life and improve overall energy efficiency. It is widely used in automotive lighting, TV backlight and other fields.
5. **Wireless Communication Equipment**
In **wireless communication equipment**, such as **RF amplifier** and **RF switch**, this MOSFET can be used as an RF switch for switching high-frequency signals, helping to optimize the quality and efficiency of communication signals. Its small size and low resistance make it ideal for high-performance communication applications.
6. Smart Home and IoT Devices
**SW3406-VB** is also widely used in smart home and IoT devices, such as smart sockets, sensor power management and smart lamps. Its efficient switching capability and low power consumption make it suitable for use in these low-power, high-performance smart devices.
---
The low voltage, low on-resistance and high current carrying capacity of SW3406-VB MOSFET make it suitable for a variety of electronic products that require high performance and low power consumption, especially in battery-powered devices, mobile devices, power management modules and high-efficiency switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
