Product introduction：
SW100N10B-VB MOSFET Product Introduction
**Model:** SW100N10B-VB
**Package type:** TO220
**Configuration:** Single-N-Channel
**Maximum drain-source voltage (VDS):** 100V
**Maximum gate-source voltage (VGS):** ±20V
**Gate-source threshold voltage (Vth):** 3V
**On-resistance (RDS(ON)):** 5mΩ @ VGS = 10V
**Maximum drain current (ID):** 120A
**Technology:** Trench
SW100N10B-VB is an N-channel MOSFET using Trench technology, designed for high performance, high current applications. It has extremely low on-resistance (5mΩ@VGS=10V) and high current carrying capacity (120A), and is particularly suitable for power management systems that require high efficiency and high power. This MOSFET can work stably under a voltage environment of 100V and has fast switching performance, making it very suitable for high-efficiency power modules such as power tools, electric vehicles, and power converters.
---
File download
Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
100V |
|
3V |
120A |
|
|
5mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
100V |
|
3V |
120A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
100V |
|
3V |
120A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
SW100N10B-VB MOSFET Detailed parameter description
- **Package type: ** TO220
- **Configuration: ** Single-N-Channel
- **Maximum drain-source voltage (VDS): ** 100V
- **Maximum gate-source voltage (VGS): ** ±20V
- **Gate-source threshold voltage (Vth): ** 3V
- **On-resistance (RDS(ON)): ** 5mΩ @ VGS = 10V
- **Maximum drain current (ID): ** 120A
- **Maximum power dissipation (Pd): ** 300W
- **Operating temperature range: ** -55°C to +150°C
- **Gate charge (Qg): ** 110nC
- **Reverse recovery time (trr): ** 40ns
SW100N10B-VB uses Trench technology and has a very low on-resistance (5mΩ), which can significantly reduce conduction losses and improve system efficiency. It supports a maximum drain current of 120A, suitable for applications with high current requirements, and also has a maximum power dissipation capacity of 300W, which can operate stably under higher power loads. Its gate charge is 110nC, with fast switching characteristics, suitable for high-frequency operation mode.
---
Domain and module applications：
SW100N10B-VB MOSFET Application Fields and Module Examples
**1. Power Tools and Electric Drive Systems**
Due to its high current carrying capacity (120A) and low on-resistance (5mΩ), SW100N10B-VB is very suitable for power tools and electric drive systems. In power tools such as electric wrenches and electric drills, it can provide strong current driving capabilities to ensure efficient operation of the equipment. Especially for high-load motor drive and battery management applications, the low loss and high reliability of this MOSFET are particularly important.
**2. Electric Vehicles and Battery Management Systems**
In electric vehicles (EVs), SW100N10B-VB can be used in battery management systems (BMS), motor drives, and power conversion modules. It can effectively control the charging and discharging process of the battery, support high current operation, reduce the heat accumulation of the battery under high power operation, and extend the battery life. At the same time, its high switching speed and low on-resistance help improve the energy efficiency of electric vehicles.
**3. DC-DC Converters and Power Management Systems**
The low on-resistance of SW100N10B-VB makes it an ideal choice for DC-DC converters, especially for power management systems that require high efficiency. It can reduce power loss and improve the overall energy efficiency of the system during high-frequency and high-current conversion, and is widely used in server power supplies, power adapters, UPS (uninterruptible power supplies) and other equipment.
**4. High-Efficiency Inverters**
In inverter applications, SW100N10B-VB has characteristics that are very suitable for high-frequency and high-current operations. Its low on-resistance and high switching speed enable it to provide stable performance in high-efficiency inverters, which are widely used in photovoltaic power generation, wind energy systems, and power storage systems to ensure higher power conversion efficiency.
**5. High-Power Power Adapters and UPS Systems**
SW100N10B-VB is also suitable for use in high-power power adapters and uninterruptible power supply (UPS) systems. Because it can handle high current and high power loads, it can effectively manage the battery charging and discharging process and provide stable and efficient power output. It is suitable for use in servers, communication equipment and industrial power management systems.
**6. Smart Grids and Load Control Systems**
SW100N10B-VB also has important applications in smart grids and load control systems. This MOSFET can efficiently regulate grid loads, ensure the stability and response speed of the power system, and is particularly suitable for power distribution and dispatching systems. It can respond quickly when the grid load fluctuates, which helps to achieve efficient operation of smart grids.
---
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
