Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
|
8mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description:
1. **VDS (drain-source voltage)**: 30V
- This parameter indicates the maximum drain-source voltage that the MOSFET can withstand. Exceeding this voltage will cause the MOSFET to be damaged. Suitable for low voltage applications.
2. **VGS (gate-source voltage)**: ±20V
- The gate-source voltage is the key to controlling the conduction of the MOSFET. The range of ±20V ensures that the MOSFET can work stably under high gate voltage.
3. **Vth (threshold voltage)**: 1.7V
- The threshold voltage refers to the minimum gate voltage for the MOSFET to change from the off state to the on state. The lower threshold of 1.7V allows the MOSFET to be turned on at a low gate voltage, which is suitable for low voltage control systems.
4. **RDS(ON)（On-resistance）**：
- **11mΩ @ VGS = 4.5V**
- **8mΩ @ VGS = 10V**
- The on-resistance of this MOSFET is very low, ensuring higher efficiency and reduced heat loss in high current applications. Especially at VGS = 10V.
5. **ID（Drain Current）**：13A
- The maximum drain current that this MOSFET can handle is 13A, which is suitable for applications that require high current drive.
6. **Technology**：Trench technology
- Trench technology MOSFET has low on-resistance, higher switching speed and good thermal management performance, which is suitable for high frequency and high current applications.
---
Domain and module applications：
Application fields and module examples:
1. **Power management**:
With its low on-resistance and high current handling capability, the STS10NF30L-VB is suitable for use in DC-DC converters, PFC (power factor correction) circuits, and power supply modules. Especially in high-efficiency power supply and low-power design, it helps to improve power conversion efficiency, reduce heat generation, and extend device life.
2. **Battery-driven devices**:
Due to its low on-resistance and high current carrying capacity, the STS10NF30L-VB is particularly suitable for use in battery management systems (BMS), providing efficient power switching while effectively extending battery life.
3. **Switching power supply (SMPS) modules**:
The low RDS(ON) of this MOSFET makes it excellent in high-frequency switching applications, suitable for switching power supply modules, helping to reduce system power losses and improve overall performance, especially in modules such as DC-DC converters.
4. **LED Driver**:
STS10NF30L-VB can be used for current control and voltage regulation in LED driver power supplies, and has extremely low on-resistance, making it an ideal choice for energy-saving LED driver systems.
5. **Automotive Electronics**:
In automotive electronic systems, STS10NF30L-VB can be used as a switching element in battery management, motor control, and high-efficiency power systems to meet high temperature and high current requirements, ensuring the stability and efficiency of automotive systems.
6. **Industrial Automation Equipment**:
This MOSFET can be used as an efficient switching element in industrial automation fields such as power tools, robot controllers, and motor drive modules. Its high current capability and low on-resistance are very suitable for high-power drives.
Through these applications, STS10NF30L-VB can improve power utilization efficiency and reduce system heat loss in multiple fields, providing more stable operating performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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