Product introduction:
Product Introduction:
**STP9NM50N-VB** is a high-voltage N-channel MOSFET in TO220 package, designed for high voltage applications. Its maximum drain-source voltage (Vds) is 650V, suitable for power management, power conversion, switching power supplies and industrial applications that require high voltage tolerance. This model has a high Rds(on) of 500mΩ (Vgs = 10V), a maximum drain current of 9A, and uses SJ_Multi-EPI technology (Super Junction Multi-EPI). This MOSFET provides low on-resistance and high voltage tolerance, suitable for high-efficiency, high-density power applications.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
9A |
|
|
500mΩ |
SJ_Multi-EPI |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
9A |
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
9A |
|
SJ_Multi-EPI |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description:
- **Package**: TO220
- **Configuration**: Single-N-Channel
- **Drain-source voltage (Vds)**: 650V
- **Gate-source voltage (Vgs)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (Rds(on))**: 500mΩ @ Vgs = 10V
- **Maximum drain current (Id)**: 9A
- **Technology**: SJ_Multi-EPI
- **Maximum power dissipation (Pd)**: 100W (assuming the maximum rated power of the MOSFET is 100W, the actual value may vary depending on the heat dissipation conditions)
- **Operating temperature range**: -55°C to +150°C
- **Input capacitance (Ciss)**: 1200pF @ Vds = 100V (provides better switching performance)
- **Output capacitance (Coss)**: 60pF @ Vds = 100V
Domain and module applications:
Applicable fields and module application examples:
1. **Power conversion and power management**
The high Vds and low Rds(on) of STP9NM50N-VB make it very suitable for high-voltage power supplies and power conversion modules. In devices such as switching power supplies (SMPS) and battery chargers, it can be used for switching operations in the high-voltage segment to ensure small power losses and efficient power conversion.
2. **Industrial equipment and motor drive systems**
This MOSFET has a high operating voltage and low on-resistance, which is suitable for industrial control equipment and motor drive systems, especially in high-power motor starting or variable frequency drive, which can provide higher efficiency and longer service life.
3. **Automotive electronics**
STP9NM50N-VB is also widely used in automotive power management systems, such as battery management systems (BMS), DC-DC converters, etc. In these high-voltage power modules, the stable switching characteristics can effectively reduce system losses and heat generation, and improve overall energy efficiency.
4. **Switching power supply and UPS system**
In uninterruptible power supply (UPS) and other power supply equipment, the high withstand voltage capability and low Rds(on) characteristics of STP9NM50N-VB MOSFET can help the system maintain high efficiency, ensure the stability of the power supply and long-term trouble-free operation.
5. **Home appliances and consumer electronics**
In home appliances and some consumer electronics products, especially those power modules that require high voltage protection, STP9NM50N-VB as a switching element can effectively regulate current and reduce heat loss.
Through the above application examples, STP9NM50N-VB is suitable for multiple fields requiring high voltage, current control and power efficiency, especially in environments with high voltage, low power loss and high conduction efficiency requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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