Product introduction:
Product Introduction
**STP9NA50-VB** is a **500V N-type power MOSFET**, which adopts **TO220** package and is designed for high voltage and high power applications. It has a **low on-resistance (RDS(ON))**, which is **660mΩ** at **VGS=10V**, enabling it to work effectively at high voltage with low power consumption. The maximum drain current (ID) of this MOSFET is **13A**, which can meet the needs of high current load applications and is suitable for a variety of high-efficiency power conversion and power management fields.
**STP9NA50-VB** adopts **Plannar** technology, which can provide fast switching characteristics, stable current control, and has high voltage resistance and low conduction loss. It is very suitable for **high voltage power management, industrial drive, inverter and other applications** to provide efficient power conversion and regulation.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
500V |
|
3.1V |
13A |
|
|
660mΩ |
Plannar |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Plannar |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
500V |
|
3.1V |
13A |
|
Plannar |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
500V |
|
3.1V |
13A |
|
Plannar |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
| **Parameter** | **Description** |
|----------------------|------------------------------------------------|
| **Package** | TO220 |
| **Configuration** | Unipolar N-type MOSFET |
| **VDS** | 500V |
| **VGS** | ±30V |
| **Vth** | 3.1V |
| **RDS(ON)** | 660mΩ @ VGS=10V |
| **ID** | 13A |
| **Maximum power dissipation** | 130W (depends on heat dissipation conditions) |
| **Operating temperature range** | -55°C to 150°C |
| **Input capacitance (Ciss)** | 1350pF @ VDS=25V, VGS=0V |
| **Maximum rise voltage** | 150V/ns |
| **Technology** | Plannar |
| **Junction Temperature** | 150°C max |
Domain and module applications:
Applications and modules
1. **Power management and efficient conversion**
**STP9NA50-VB** is suitable for **high voltage power management** and **switching power supplies** (such as **DC-DC converters**, **AC-DC power converters**). It can operate efficiently at high voltages (up to 500V) and has a low on-resistance to reduce power losses. In high-efficiency power supply designs, MOSFETs can effectively reduce heat losses and optimize conversion efficiency.
2. **Inverters and power conversion systems**
In **renewable energy power systems** such as **solar inverters** and **wind inverters**, **STP9NA50-VB** provides a stable power switching solution that can handle higher voltages (500V) and efficiently convert direct current (DC) to alternating current (AC). This high-voltage MOSFET helps achieve higher efficiency and longer equipment life in inverters.
3. **Motor drive and industrial control**
**STP9NA50-VB**'s **13A high current carrying capacity** and **500V withstand voltage** make it an ideal choice for **industrial motor drives**. In applications such as motor starting, acceleration, and speed change, MOSFET can respond quickly, control current fluctuations, and improve system stability. In addition, it excels in **speed regulation systems** and **servo control** in the industrial field.
4. **Automotive electronic systems**
In **automotive power management systems**, especially in **high-voltage battery management systems (BMS)** and **electric vehicle chargers** power conversion modules, **STP9NA50-VB** provides excellent switching performance, helps optimize the battery charging and discharging process, ensures efficient power transmission, and can withstand high voltage and high current.
5. **High-power applications**
**STP9NA50-VB** is also suitable for various **high-power power supplies** and **power amplifiers**. For example, in **high-power lasers**, **medical equipment**, and **high-power audio amplifiers**, the low conduction loss and high power handling capability of MOSFET enable it to provide stable power output, ensuring that the equipment continues to work stably under high loads.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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