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STP90N4F3-VB Product details

Product introduction:

1. **Product Introduction**

STP90N4F3-VB is a high-performance N-type MOSFET in TO220 package, designed for high current and low resistance applications. With a maximum drain-source voltage of 40V and a maximum drain current of up to 110A, the device is ideal for high-efficiency power management and switching applications. It uses **Trench** technology with very low on-resistance (R_DS(ON) = 7mΩ @ V_GS = 4.5V and 6mΩ @ V_GS = 10V), which enables low power loss and high efficiency under high current operating conditions. STP90N4F3-VB is suitable for a wide range of power modules, inverters, motor drives and other high power switching applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 40V 2.5V 110A 6mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 40V 2.5V 110A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 40V 2.5V 110A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
2. **Detailed parameter description**

- **Package type**: TO220
- **Configuration**: Single N-type MOSFET
- **Maximum drain-source voltage (V_DS)**: 40V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 2.5V
- **On-resistance (R_DS(ON))**:
- 7mΩ @ V_GS = 4.5V
- 6mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 110A
- **Maximum power loss (P_d)**: 150W
- **Maximum junction temperature (T_j)**: 150°C
- **Operating temperature range**: -55°C to +150°C
- **Thermal resistance (R_thJC)**: 1.5°C/W
- **Thermal resistance (R_thJA)**: 62°C/W (natural cooling)
- **Technology type**: Trench

Domain and module applications:

3. **Application fields and modules**

#### **High-efficiency power management**
STP90N4F3-VB is very suitable for power management systems due to its low on-resistance and excellent switching characteristics, especially in applications requiring high current handling and low power consumption. In devices such as DC-DC converters, AC-DC power supplies, and DC power systems, it can effectively reduce energy losses and improve conversion efficiency, thereby ensuring efficient and stable operation of the entire power system.

#### **Motor drive system**
In motor drive systems, the 110A maximum drain current capability of STP90N4F3-VB enables it to drive large motors or high-power devices. It is suitable for applications such as industrial automation equipment, home appliances, and power tools that require high current control, and can switch quickly at low on-resistance, improving the efficiency and response speed of motor drive systems.

#### **Electric Vehicles and Inverters**
This MOSFET can be widely used in the drive system and battery management system (BMS) of electric vehicles (EVs), especially in power conversion and battery charge and discharge control. Its low R_DS(ON) characteristics and high current carrying capacity make it excellent in inverters, DC-AC conversion and electric vehicle charging equipment, and can effectively handle switching operations in high voltage and high current environments.

#### **Power Electronics and Industrial Control**
In the field of power electronics, STP90N4F3-VB is suitable for high-power switching devices such as power conversion modules, UPS systems, power protection switches, etc. Its high current handling capability, low on-resistance and fast switching characteristics enable it to efficiently control high power currents, reduce heat generation and improve system stability, especially in industrial control and power electronics modules, which can improve system reliability and life.

#### **High-frequency switching power supply**
STP90N4F3-VB can also be used in high-frequency switching power supplies (such as communication power supplies, telecommunication equipment, and broadcasting equipment), especially in situations where high current and low power loss are required. Due to its low on-resistance and efficient switching performance, it can handle rapid current changes without excessive heat loss, ensuring stable operation of power supply equipment at high frequency and high power.

### Summary

STP90N4F3-VB is an excellent N-type MOSFET designed for high current and low power consumption applications, suitable for various power management, motor drive, inverter, power electronics, and high-efficiency switching power supplies. Its low on-resistance, excellent switching performance, and high current carrying capacity make it excellent in situations requiring high efficiency and high reliability. By reducing energy loss and improving conversion efficiency, it can provide more stable and efficient performance for modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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