Product introduction：
Product Introduction
STP8NK85Z-VB is a high-performance N-channel MOSFET in a TO220 package designed for medium and high voltage applications. Its maximum drain-source voltage (VDS) is 800V, making it particularly suitable for power electronic systems such as switching power supplies, power amplifiers, and motor control that require high voltage control. The gate-source voltage (VGS) range of this MOSFET is ±30V, and it has a low on-resistance (RDS(ON) = 850mΩ@VGS=10V), which provides high efficiency when operating at high currents and effectively reduces energy losses.
STP8NK85Z-VB uses SJ_Multi-EPI technology, which improves switching performance and enhances the stability of the device under high voltage and high current conditions. The maximum drain current (ID) of this MOSFET is 7A, which enables it to handle relatively high currents and is suitable for applications with high current loads and high power requirements.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
800V |
|
3.5V |
7A |
|
|
850mΩ |
SJ_Multi-EPI |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
800V |
|
3.5V |
7A |
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
800V |
|
3.5V |
7A |
|
SJ_Multi-EPI |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Package type**: TO220
- **Configuration**: Single-N-Channel
- **VDS (drain-source voltage)**: 800V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON)**:
- 850mΩ@VGS=10V
- **ID (maximum leakage current)**: 7A
- **Technology type**: SJ_Multi-EPI
- **Maximum power loss**: Considering its low RDS(ON) characteristics, it can effectively reduce power loss and is suitable for applications requiring higher power conversion efficiency.
- **Operating temperature range**: Generally -55°C to +150°C (depending on heat dissipation conditions)
- **Maximum gate-source voltage (VGS max)**: ±30V
- **Switching characteristics**: Excellent switching performance, suitable for high-frequency operation.
Domain and module applications：
Applicable fields and modules
The high withstand voltage and low on-resistance of STP8NK85Z-VB make it very useful in multiple power electronics fields, especially under high voltage and high current conditions. Here are some typical application areas:
1. **Switching Power Supply (SMPS)**:
STP8NK85Z-VB is an ideal choice for high voltage switching power supplies (e.g., AC-DC power supplies, DC-DC converters). Due to its high VDS (800V) and low on-resistance, it can effectively reduce energy loss and ensure efficient conversion of power supply systems. This MOSFET is particularly suitable for high-efficiency power supply systems such as computer power supplies, communication power supplies, and industrial power supplies.
2. **Motor Drive System**:
In high voltage motor control systems, STP8NK85Z-VB is able to provide stable power conversion and drive high power motors. Its low on-resistance helps reduce power loss when the motor starts and runs, making it very suitable for motor drive systems for power tools, electric vehicles, home appliances, and other equipment.
3. **Power amplifier**:
Due to its high voltage carrying capacity and good switching performance, STP8NK85Z-VB is suitable for use in audio power amplifiers and RF power amplifiers. It can work stably under high voltage and high frequency working conditions, provide strong output power, and reduce signal distortion and power loss.
4. **High voltage battery management system**:
STP8NK85Z-VB can be used in high voltage battery management systems, especially in applications such as electric vehicles (EV) and hybrid electric vehicles (HEV). The high VDS capability of this MOSFET makes it very suitable for use in battery charging and discharging control, ensuring safe and efficient operation of the battery.
5. **Power factor correction (PFC) circuit**:
In applications that need to improve the power factor, STP8NK85Z-VB is a very ideal choice. Its low RDS(ON) characteristics and high VDS capability enable it to work efficiently in PFC circuits, reduce energy loss, and improve the efficiency of the overall system. Suitable for home appliances, industrial power supplies, server power supplies, etc.
6. **Power management module**:
STP8NK85Z-VB is suitable for various power management modules, such as power converters, battery protection circuits, UPS power supplies, etc. In these applications, the low on-resistance and high voltage tolerance of MOSFET can provide efficient energy conversion, ensure stable operation of the equipment, and extend the service life.
7. **Medical power system**:
In medical equipment, STP8NK85Z-VB can be used in the power system to improve conversion efficiency and reduce heat. Especially in applications requiring high reliability and high stability, STP8NK85Z-VB can provide stable power output to ensure the safe and reliable operation of medical equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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