Product introduction：
Product Introduction:
STP400N4F6-VB is a high-efficiency unipolar N-channel MOSFET in TO220 package, designed for high current, high-efficiency applications. With a maximum drain-source voltage (VDS) of 40V and a maximum drain current (ID) of 180A, the device is suitable for power management and power conversion applications that require high current handling. Its threshold voltage (Vth) is 3V, and it has good switching performance. The on-resistance (RDS(ON)) of STP400N4F6-VB performs well at different gate voltages, which are 15mΩ at 4.5V gate and 2mΩ at 10V gate, ensuring low power operation and reducing heat loss. This MOSFET uses Trench technology, which has lower switching losses and higher efficiency, and is suitable for high-frequency, high-efficiency power electronics applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
40V |
|
3V |
180A |
|
|
2mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
40V |
|
3V |
180A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
40V |
|
3V |
180A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description:
- **Package**: TO220
- **Configuration**: Unipolar N-channel
- **VDS (drain-source voltage)**: 40V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 3V
- **RDS(ON)**:
- At 4.5V gate voltage: 15mΩ
- At 10V gate voltage: 2mΩ
- **ID (maximum leakage current)**: 180A
- **Technology**: Trench technology
Domain and module applications：
Applicable fields and modules:
With its extremely low RDS(ON) value and high current carrying capacity, the STP400N4F6-VB is suitable for providing high-efficiency power control in multiple fields. The following are examples of applications of this MOSFET:
1. **Power Management and Battery Management System (BMS)**:
Due to its high current handling capability and low RDS(ON), the STP400N4F6-VB is an ideal choice for high-efficiency DC-DC converters and battery management systems. In these applications, this MOSFET can effectively reduce power consumption and improve overall system efficiency, especially during battery charging and energy recovery, which can reduce heat loss and improve energy conversion efficiency.
2. **Power Tools and Electric Vehicle (EV) Drive Systems**:
In power tools and electric vehicle drive systems, this MOSFET can be used as an efficient switching element for motor drive and power control modules. Due to its low on-resistance, it can operate stably under large current loads, ensuring high efficiency and long-term use of the equipment.
3. **Industrial Motor Control and Power Electronics**:
In industrial automation and control systems, STP400N4F6-VB is suitable for use as a switching element in motor drives, inverters, and other power electronic modules. Its low on-resistance helps reduce energy loss and keeps the system's power conversion efficiency high, making it particularly suitable for industrial environments that require high frequency and high current.
4. **High-efficiency Power Supplies and Power Converters**:
This MOSFET is also widely used in various types of high-efficiency power converters, such as AC-DC converters, photovoltaic inverters, etc. These applications require fast switching operations and low power consumption, and the high efficiency and low switching loss of STP400N4F6-VB make it one of the core components in these systems.
In general, STP400N4F6-VB is suitable for various types of power electronic modules and systems that require high efficiency, low power consumption, and high current, thanks to its high current carrying capacity, low RDS(ON), and excellent switching characteristics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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