Product introduction：
**
STP33N10-VB is a single N-channel MOSFET based on Trench technology, packaged in TO220, designed for high-efficiency power conversion and high-current applications. Its maximum drain-source voltage (V_DS) is 100V and its maximum drain current (I_D) is 55A, which can meet the needs of a variety of high-power electronic devices. This MOSFET has a low threshold voltage (V_th) of 1.8V, suitable for low drive voltage control. Its on-resistance (R_DS(ON)) is 38mΩ (at V_GS = 4.5V) and 36mΩ (at V_GS = 10V), ensuring high efficiency and low energy loss. STP33N10-VB MOSFET can be widely used in high-frequency switching power supplies, power tool drives, LED drives and other fields.
---
**STP33N10-VB MOSFET -
File download
Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
100V |
|
1.8V |
55A |
|
|
36mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
100V |
|
1.8V |
55A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
100V |
|
1.8V |
55A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
**
- **Package type**: TO220
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (V_DS)**: 100V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.8V
- **On-resistance (R_DS(ON))**:
- 38mΩ @ V_GS = 4.5V
- 36mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 55A
- **Technology**: Trench technology
- **Maximum power loss**: Further calculated based on application scenarios and operating conditions
- **Operating temperature range**: Typically -55°C to +150°C
- **Power package**: Suitable for high power switching applications
---
**
Domain and module applications：
**
1. **Switching Power Supply (SMPS)**
STP33N10-VB MOSFET is very suitable for efficient switching power supply (SMPS) design due to its low on-resistance and high current carrying capacity. Especially in high-power applications in the 100V range, this MOSFET can provide efficient power conversion, reduce energy loss and reduce heat, and is widely used in power modules for computer power supplies, industrial power supplies and consumer electronics.
2. **Power Tool Driver**
In power tools, STP33N10-VB can be used as a switching element to help drive motors and control battery power. Its high current carrying capacity and low on-resistance enable it to effectively drive high-power loads while maintaining high efficiency and reducing energy losses, making it suitable for efficient motor control systems.
3. **LED Drive Circuit**
The low R_DS(ON) and high current capability of this MOSFET make it very suitable for LED drive circuits. Through efficient power conversion, the STP33N10-VB can provide stable current for high-power LEDs, ensuring long life and high brightness output of the LED system.
4. **Electric vehicle charging system**
In the charging system of electric vehicles, the STP33N10-VB MOSFET can be used for current control and switching functions in the battery management system (BMS). Its high current capability enables it to effectively manage the charging current, while its low on-resistance helps reduce the energy loss of the system.
5. **Battery Management System (BMS)**
In the battery management system, the STP33N10-VB can be used for battery charge and discharge control, especially for large-capacity battery systems. The low R_DS(ON) characteristics of this MOSFET ensure efficient energy transmission, help improve the overall system efficiency, and reduce heat accumulation.
6. **Power Amplifier**
Due to its high current capability and low on-resistance, the STP33N10-VB is also very suitable for various power amplifier designs, especially audio power amplifiers and radio frequency (RF) power amplifiers, to improve energy efficiency and reduce energy loss.
These applications demonstrate the wide applicability of the STP33N10-VB in high-efficiency power conversion, drive circuits, battery management systems and high-power switching applications. Its low R_DS(ON) and high current capability make it particularly suitable for systems that require high efficiency and low loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
