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STP21NM60ND-VB Product details

Product introduction:

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STP21NM60ND-VB is a high-performance N-channel MOSFET in TO220 package, designed based on SJ_Multi-EPI technology, with a withstand voltage (VDS) of 650V and a maximum leakage current (ID) of 20A. The on-resistance of this MOSFET is as low as 160mΩ @ VGS = 10V, which can effectively reduce switching losses and heat losses, and ensure high-efficiency operation of the power system. STP21NM60ND-VB is particularly suitable for applications that require high withstand voltage, high current handling capabilities and have strict requirements on power loss, such as switching power supplies, inverters, DC-DC converters, etc. Due to its excellent performance, it is widely used in power electronic equipment, energy management, industrial automation, and electric vehicles.

**STP21NM60ND-VB MOSFET

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 650V 3.5V 20A 160mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
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- **Package type**: TO220
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 20A
- **Technology**: SJ_Multi-EPI technology
- **Switching characteristics**: The low on-resistance (RDS(ON)) characteristics of STP21NM60ND-VB ensure that it works efficiently under high current, reducing heat loss in the system and improving the overall efficiency of the system.
- **Power loss**: Due to its low RDS(ON), this MOSFET generates less power loss during operation, which is beneficial to improve the overall performance of the system and reduce the heat dissipation requirements. It is particularly suitable for high-efficiency power electronic systems.

**STP21NM60ND-VB MOSFET

Domain and module applications:

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1. **Switching Power Supply (SMPS)**
STP21NM60ND-VB is suitable for various power modules in switching power supply (SMPS) design, especially in high-efficiency AC-DC or DC-DC converters. Its 650V withstand voltage and 20A current handling capability make it suitable for high-power power supply applications. Low RDS(ON) value and high-efficiency switching characteristics reduce power loss and heat generation, help improve the efficiency and reliability of power supply, and are widely used in industrial power supply, computer power supply and communication power supply.

2. **Inverters**
Due to its high withstand voltage (650V) and high current (20A) characteristics, STP21NM60ND-VB is widely used in inverter systems. It is particularly suitable for solar inverters, electric vehicle inverters and other inverter modules that require high efficiency and high current. STP21NM60ND-VB can effectively convert DC voltage to AC voltage while ensuring system stability and high-efficiency operation, and is a key component in power conversion systems.

3. **DC-DC Converter**
In high-efficiency power management systems, STP21NM60ND-VB can be widely used in DC-DC converter modules to provide stable voltage regulation and efficient energy conversion. This MOSFET can handle higher currents with low switching losses, greatly improving the efficiency of the power system. It is suitable for various battery-powered devices, mobile device chargers, industrial power modules, etc.

4. **Electric Vehicles (EV/HEV)**
Due to its high current and high voltage resistance characteristics, STP21NM60ND-VB is suitable for battery management systems (BMS) and electric drive systems in electric vehicles (EV/HEV). During the battery charging and discharging process of electric vehicles or hybrid vehicles, STP21NM60ND-VB can ensure efficient power conversion, ensure stable operation of the drive motor, reduce energy loss and extend battery life.

5. **Power Management System**
STP21NM60ND-VB is widely used in efficient power management systems, especially in UPS (Uninterruptible Power Supply) systems, battery chargers, energy storage and conversion systems. Due to its low on-resistance and excellent switching characteristics, it can effectively improve the efficiency of power management systems, reduce heat loss, ensure stable operation and long service life.

**Summary**

STP21NM60ND-VB is a high-performance N-channel MOSFET using SJ_Multi-EPI technology with a withstand voltage of 650V, an on-resistance of 160mΩ and a maximum leakage current of 20A, suitable for efficient power conversion systems. Its low on-resistance and efficient switching characteristics make it perform well in switching power supplies, inverters, DC-DC converters, electric vehicles and power management systems. It is widely used in energy, industry, electric vehicles and other fields, and is an important component in modern efficient power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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