Product introduction:
STM4433A-VB MOSFET Product Introduction
**STM4433A-VB** is a high-efficiency single P-channel MOSFET in SOP8 package, designed for low-voltage, high-efficiency applications. Its maximum drain-source voltage (VDS) is -30V and its maximum drain current (ID) is -5.8A, which is suitable for various low- and medium-power applications. This MOSFET has a low on-resistance (RDS(ON) = 56mΩ @ VGS = 4.5V and RDS(ON) = 33mΩ @ VGS = 10V), which can effectively reduce power loss and improve the overall efficiency of the system. Its threshold voltage (Vth) is -1.7V, which is suitable for applications that require low-voltage drive.
STM4433A-VB uses Trench technology, has excellent electrical performance and thermal stability, can operate at higher temperatures, and adapt to fast switching requirements, providing reliable performance. This makes this MOSFET have a wide range of application prospects in power management, load switching, DC-DC converters and battery management systems.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-P |
-30V |
|
-1.7V |
-5.8A |
|
|
33mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-P |
-30V |
|
-1.7V |
-5.8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-P |
-30V |
|
-1.7V |
-5.8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-P |
|
|
|
|
|
|
|
Detailed parameter description
- **Model**: STM4433A-VB
- **Package**: SOP8
- **Configuration**: Single P channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 56mΩ @ VGS = 4.5V
- 33mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: -5.8A
- **Switch technology**: Trench technology
- **Maximum power dissipation**: 40W
- **Gate charge (Qg)**: 10nC
- **Switching time (tR/tF)**: 35ns / 25ns
- **Maximum junction temperature (TJ)**: 150°C
- **Reverse recovery time (trr)**: 45ns
STM4433A-VB adopts advanced Trench technology, with low RDS(ON) and high switching speed, which can provide excellent electrical performance in fast switching applications. In addition, its lower threshold voltage enables it to work under low voltage driving conditions, providing the advantages of high efficiency and low power consumption.
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Domain and module applications:
Applications and module examples
1. **Power management system**
As a P-channel MOSFET, the STM4433A-VB is very suitable for load switching and battery power regulation in power management systems. Its low on-resistance and high current carrying capacity make it an excellent performer in power adapters, DC-DC buck converters and other power modules. Especially in the power conversion process, it can effectively reduce power loss and improve the overall energy efficiency of the system.
2. **DC-DC converter**
In DC-DC converters, the STM4433A-VB is widely used in the control of reverse voltage switches. Due to its fast switching characteristics and low on-resistance, it can significantly improve conversion efficiency and reduce system heat. Whether used in step-down (Buck) converters or boost (Boost) converters, the STM4433A-VB can effectively complete voltage conversion tasks and meet the needs of high-efficiency power management.
3. **Load switch applications**
The STM4433A-VB performs well in load switch applications. It can control the switching of high-current loads and can withstand large current surges in instantaneous switching. Its low on-resistance (RDS(ON)) ensures minimal power loss during load switching operation, making it ideal for use in battery-powered devices such as portable battery management systems, smart devices, portable power adapters, etc.
4. **Battery Management System (BMS)**
In the battery management system, the STM4433A-VB acts as a battery switch control MOSFET to effectively regulate the battery charging and discharging process. Due to its low threshold voltage and low RDS(ON) characteristics, this MOSFET provides excellent efficiency in battery management systems and can operate in environments that require efficient current switching to ensure safe and stable operation of the battery.
5. **Power Tools and Portable Devices**
In power tools and other high-power portable devices, the STM4433A-VB MOSFET can control high-current loads through its low power consumption and low on-resistance characteristics, ensuring that the battery voltage can be efficiently converted and providing stable power output. It is especially suitable for power tools, smart electric devices, etc. that require high current drive.
6. **Consumer Electronics**
The STM4433A-VB is widely used in consumer electronics, especially in battery management modules for portable products such as smartphones, tablets, and wearable devices. With its low RDS(ON) characteristics, this MOSFET can provide stable current control in a limited space, ensuring efficient operation of the device's battery management system and extending battery life.
7. **LED Driver Power**
The STM4433A-VB can be used in LED driver power supplies to help regulate the power supply voltage and current for efficient drive and stable brightness output. Its fast switching characteristics and low power consumption make it an ideal choice for high-efficiency LED lighting power supplies, providing high efficiency and low heat generation.
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* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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