Product introduction:
STL60N32N3LL-VB MOSFET Product Introduction
**STL60N32N3LL-VB** is a high-performance half-bridge N+N channel MOSFET in DFN8(5x6)-C package, designed for low voltage, high current applications, with a maximum drain-source voltage (VDS) of 30V. This MOSFET uses Trench technology, has ultra-low on-resistance (RDS(ON) = 4mΩ @ VGS = 4.5V and RDS(ON) = 3.4mΩ @ VGS = 10V), supports up to 60A of drain current (ID = 60A), ensuring efficient power transmission and extremely low power loss.
STL60N32N3LL-VB adopts half-bridge configuration, which is particularly suitable for applications such as power management systems, high-efficiency motor drives, DC-DC converters, and high-frequency switching power supplies. Its low on-resistance and high current carrying capacity make it very suitable for power conversion and load switching scenarios that require high efficiency and high reliability, especially in high-efficiency drive systems.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6)-C |
Half-Bridge-N+N |
30V |
|
1.7V |
60A |
|
|
3.4mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6)-C |
Half-Bridge-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6)-C |
Half-Bridge-N+N |
30V |
|
1.7V |
60A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6)-C |
Half-Bridge-N+N |
30V |
|
1.7V |
60A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6)-C |
Half-Bridge-N+N |
|
|
|
|
|
|
|
Detailed parameter description
- **Model**: STL60N32N3LL-VB
- **Package**: DFN8(5x6)-C
- **Configuration**: Half-bridge N+N channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS = 4.5V
- 3.4mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 60A
- **Switch technology**: Trench technology
- **Maximum power dissipation**: 100W
- **Gate charge (Qg)**: 30nC
- **Switching time (tR/tF)**: 30ns / 20ns
- **Maximum junction temperature (TJ)**: 150°C
- **Reverse recovery time (trr)**: 30ns
The low RDS(ON) and high current handling capability of the STL60N32N3LL-VB enable it to reduce power losses in high current applications, and its fast switching characteristics make it suitable for use in high-frequency, high-efficiency power supply applications.
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Domain and module applications:
Applications and module examples
1. **Motor drive and control**
STL60N32N3LL-VB is very suitable for motor drive systems, especially in DC motor (DCM) and brushless DC motor (BLDC) drives. Its low on-resistance and high current carrying capacity enable it to efficiently control the start, run and stop processes of the motor, reduce current loss and improve system reliability. In power tools, home appliances, industrial robots and automotive electric drive systems, STL60N32N3LL-VB can achieve efficient motor control and ensure the stability and response speed of the drive system.
2. **DC-DC converter**
STL60N32N3LL-VB is suitable for various DC-DC converters (especially Buck and Boost converters). In these converters, it can provide low-loss power conversion to ensure efficient operation of power management systems. Especially in battery-driven devices, the STL60N32N3LL-VB can reduce energy loss and improve battery efficiency through its low RDS(ON) characteristics, making it suitable for power management modules in portable devices, consumer electronics, and new energy vehicles.
3. **Power management system**
As a half-bridge MOSFET, the STL60N32N3LL-VB is very suitable for use in efficient power management systems, especially in situations where frequent switching is required, such as power conversion, battery charging, and battery protection modules. Its fast switching characteristics (tR/tF = 30ns / 20ns) enable it to reduce energy loss in the case of high-frequency switching, while having good thermal management performance, which helps to improve the overall performance and reliability of the system.
4. **Consumer electronics**
The STL60N32N3LL-VB is suitable for the consumer electronics field, especially for applications that require efficient power conversion and stable power output, such as smartphones, electric toys, portable audio, etc. Its high current carrying capacity enables it to support the efficient operation of these electronic devices, especially in fast charging, power amplification, and battery management systems.
5. **Battery Management System (BMS)**
STL60N32N3LL-VB is very suitable for battery management system (BMS), especially in electric vehicles (EV) and energy storage systems. In these systems, MOSFET acts as a switching element to control the charging and discharging process of the battery, which can efficiently manage the battery current and protect the battery from damage caused by overcurrent and overvoltage, while extending battery life and improving system efficiency.
6. **Solar Inverter**
STL60N32N3LL-VB is widely used in solar inverters, especially in the process of converting power from direct current (DC) to alternating current (AC). Its high current carrying capacity and low on-resistance characteristics enable the inverter to efficiently convert electrical energy, ensure the high efficiency and stability of the system, and reduce energy loss. It is particularly suitable for home and industrial solar power generation systems.
7. **Wireless communication equipment**
STL60N32N3LL-VB is suitable for power amplifier (PA) circuits in wireless communication equipment due to its fast switching characteristics and high efficiency. MOSFET can perform high-frequency switching operations in the power amplifier, support fast signal amplification and conversion, and reduce energy loss, thereby improving the stability and transmission efficiency of the communication system.
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* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features