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STA6610-VB Product details

Product introduction:

Product Introduction

**STA6610-VB** is a dual N-channel MOSFET in a DIP8 package, designed for low voltage, high current applications. This MOSFET has a low on-resistance (RDS(ON) is 18mΩ at VGS=4.5V, 15mΩ at VGS=10V), and can provide high efficiency under high current conditions, suitable for power switching, power management and various current control applications. Its maximum drain-source voltage (VDS) is 30V and the maximum drain current (ID) is 9.5A, ensuring that it can operate stably in multiple power conversion and current regulation systems. The use of Trench technology gives it lower on-resistance and higher switching efficiency, making it suitable for various low-voltage power management, drive systems and battery control applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DIP8 Dual-N 30V 1~3V 9.5A 15mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DIP8 Dual-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DIP8 Dual-N 30V 1~3V 9.5A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DIP8 Dual-N 30V 1~3V 9.5A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DIP8 Dual-N
Parameter Description

| **Parameter** | **Value** | **Description** |
|-------------------------|----------------------------|--------------------------------------------------------------|
| **Package Type** | DIP8 | DIP8 package, suitable for higher power heat dissipation requirements and traditional circuit board layout. |
| **Configuration** | Dual N-channel | Dual N-channel MOSFET, suitable for bidirectional switch control and efficient power management system. |
| **Drain-Source Voltage (VDS)** | 30V | The maximum drain-source voltage is 30V, suitable for low-voltage power supply system. |
| **Gate-Source Voltage (VGS)** | ±20V | The gate-source voltage range is ±20V, supporting a variety of drive voltages and adapting to various drive circuits. |
| **Threshold Voltage (Vth)** | 1~3V | The threshold voltage is between 1V and 3V, suitable for low-voltage switch applications, and easy to design low-power circuits. |
| **On-resistance (RDS(ON))** | 18mΩ (@VGS=4.5V), 15mΩ (@VGS=10V) | The on-resistance is 18mΩ at VGS=4.5V and 15mΩ at VGS=10V, providing low loss and high efficiency switching performance. |
| **Drain current (ID)** | 9.5A | The maximum drain current is 9.5A, suitable for medium power current control applications. |
| **Technology** | Trench | Using Trench technology, it has lower on-resistance and higher switching efficiency, suitable for high efficiency current control. |

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Domain and module applications:

Application fields and module examples

1. **Power Management Systems**
STA6610-VB has a low on-resistance (RDS(ON)=15mΩ), which is very suitable for power management systems, especially in DC-DC converters and buck-boost power modules. Its 30V VDS and up to 9.5A ID capability enable it to meet the efficient conversion and stable output of low-voltage power supplies. It is widely used in portable devices, battery chargers, mobile power supplies and other equipment to help achieve high efficiency and low power consumption.

2. **Battery Management Systems**
In the battery management system, STA6610-VB is an efficient switching element that can accurately control the charging and discharging process. Its low on-resistance ensures the efficient operation of the battery management system and reduces energy loss. This MOSFET is widely used in battery-driven equipment such as power tools, drones, and electric vehicles to provide stable and precise control of battery charging and discharging.

3. **LED Driver Circuits**
STA6610-VB is suitable for LED driver circuits, especially in low-power LED lighting and backlight modules. The low RDS(ON) value of this MOSFET ensures that the LED driver circuit can work efficiently and reduces the heat generated by power loss. Its 15mΩ on-resistance at VGS=10V is essential for LED lighting systems that require high efficiency and low temperature rise.

4. **Power Tools**
Power tools usually require efficient power conversion and current control systems. STA6610-VB can be used as a switching element in these systems. Its high drain current capability (9.5A) enables it to handle high power currents in power tools and adapt to various high-load applications. The low on-resistance of this MOSFET also helps to extend the service life of the equipment and improve operating efficiency.

5. **Inverters and Power Conversion Systems**
STA6610-VB can provide precise current switching control in inverters and other power conversion systems. Due to its Trench technology, it can efficiently convert DC power to AC power, especially suitable for low-power inverters and solar power conversion systems. The low on-resistance and high drain current capability of this MOSFET make it an ideal choice for power conversion equipment.

6. **Communication Equipment**
In communication equipment, such as base station power management systems, wireless communication power supplies, etc., STA6610-VB can provide stable and low-loss power switching. Its low RDS(ON) and high efficiency characteristics make it suitable for current regulation and power management in communication equipment, improving the stability and reliability of the equipment.

7. **Smart Grid Systems**
STA6610-VB is suitable for power control modules in smart grid systems and can provide efficient current switching under different load conditions. Its high efficiency under low voltage conditions can ensure the stable operation of smart grid systems, especially in systems that require frequent power output adjustments.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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