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SSP7432N-VB Product details

Product introduction:

SSP7432N-VB Product Introduction

SSP7432N-VB is a single N-channel power MOSFET in a **DFN8(5X6) package**, designed for high efficiency, low conduction loss and high current density applications. This model has a maximum **30V drain-source voltage (VDS)** and very low on-resistance, capable of carrying **120A high current**, providing excellent performance in a variety of power management and drive systems. It uses **Trench technology** to ensure low on-resistance and excellent switching characteristics, suitable for modern electronic systems requiring high efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 30V 1.7V 120A 3mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 30V 1.7V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 30V 1.7V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
SSP7432N-VB parameter details

1. **Basic characteristics:**
- **Package type:** DFN8(5X6)
- **Configuration:** Single N-channel
- **Maximum drain-source voltage (VDS):** 30V
- **Maximum gate-source voltage (VGS):** ±20V

2. **Threshold voltage (Vth):**
- **Typical value:** 1.7V

3. **On-resistance (RDS(ON)):**
- **5mΩ:** When the gate-source voltage is 4.5V
- **3mΩ:** When the gate-source voltage is 10V

4. **Maximum drain current (ID):**
- **120A:** Maximum continuous current under proper heat dissipation conditions

5. **Technical features:**
- **Process technology:** Trench
- **Switching characteristics:** Low gate charge and fast switching capability, suitable for high frequency switching applications.

Domain and module applications:

Application fields and module examples

1. **Power management and DC-DC conversion:**
The SSP7432N-VB is ideal for low-voltage power management and efficient DC-DC converters. Its extremely low on-resistance and high current capability make it an essential component in laptops, mobile devices, and industrial power adapters.

2. **Power tool drive system:**
Due to its high current carrying capacity and low conduction loss, the SSP7432N-VB can be widely used in drive systems such as power tools and electric bicycles that require efficient power conversion. By reducing losses, this MOSFET can improve battery life and the overall efficiency of the device.

3. **Battery management system:**
In battery charging and battery management systems, the SSP7432N-VB provides an ideal solution, especially in efficient charge and discharge control modules for electric vehicles (EVs) or energy storage devices. Its high current capability ensures efficient and safe operation of the battery pack.

4. **High-efficiency LED driver:**
This MOSFET is widely used in LED lighting driver modules, especially in high-power LED lighting systems that require high efficiency and stability. Due to its low on-resistance, it can significantly reduce power losses and improve the brightness and life of the LED.

5. **Automotive electronics and electric vehicles:**
SSP7432N-VB can be widely used in automotive electronic systems, such as automotive battery management systems, inverters, electric vehicle charging equipment, etc. In these applications, its low on-resistance and high current handling capability can improve the efficiency of power conversion, reduce heat generation, and ensure the long-term stability of the equipment.

In summary, the SSP7432N-VB is a power MOSFET with high-efficiency switching performance and extremely low on-resistance, suitable for various applications with high current and high efficiency requirements, especially in power management, power tools, battery management systems and automotive electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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